1EDN7146UXTSA1 vs 2EDL8034G4CXTMA1 Comparison

Detailed side-by-side comparison of 1EDN7146UXTSA1 by Infineon and 2EDL8034G4CXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
1EDN7146UXTSA1

1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon

1EDN7146UXTSA1 βœ“ Active
Infineon
2EDL8034G4CXTMA1

2EDL8034G4CXTMA1 - 120V 4A Half-Bridge Gate Driver | Infineon

2EDL8034G4CXTMA1 βœ“ Active

Specification Comparison

Parameter 1EDN7146UXTSA1 2EDL8034G4CXTMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.82 $1.55
Driver Type Single-channel high-side TDI gate driver Half-Bridge (High-Side / Low-Side)
Maximum Blocking Voltage 200 V β€”
Input Configuration Truly differential (TDI) β€”
Output Current (Source / Sink) 1.5 A / 2.5 A β€”
Propagation Delay [DATA_NEEDED: typical propagation delay ns] β€”
Rise Time [DATA_NEEDED: typical rise time ns] β€”
Fall Time [DATA_NEEDED: typical fall time ns] β€”
Supply Voltage (VCC) [DATA_NEEDED: VCC range V] β€”
Operating Temperature Range -40C to +125C β€”
Package PG-VSON-1 (6-pin with exposed pad) PG-VDSON-10-2 (DSN-10) with exposed pad
Mounting Type Surface Mount Surface Mount
Target Transistor GaN SG HEMT or power MOSFET β€”
MSL Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
RoHS Status Compliant β€”
Topology Support Half-bridge, low-side, high-side β€”
Configuration β€” Non-Inverting
Bootstrap Voltage (Max) β€” 120 V
Peak Source Current β€” 3 A
Peak Sink Current β€” 4 A
Number of Outputs β€” 2
Rise Time (Typical) β€” [DATA_NEEDED: rise time ns]
Fall Time (Typical) β€” [DATA_NEEDED: fall time ns]
Propagation Delay (Typical) β€” [DATA_NEEDED: propagation delay ns]
Input Logic Compatibility β€” 3.3 V / 5 V
VCC Supply Voltage β€” [DATA_NEEDED: VCC range V]
UVLO Protection β€” Yes (VCC and VBS)
Isolation Type β€” Junction-isolated (level-shifted)
ESD Rating (HBM) β€” [DATA_NEEDED: ESD HBM kV]
Operating Junction Temperature β€” -40 C to +125 C
Lead-Free / RoHS β€” Yes (per Infineon product page)

Datasheets & Resources

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