1EDN7146UXTSA1 vs 2EDL8034G4CXTMA1 Сравнение
Подробное сравнение бок о бок 1EDN7146UXTSA1 от Infineon и 2EDL8034G4CXTMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | 1EDN7146UXTSA1 | 2EDL8034G4CXTMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | Power MOSFET Drivers | Power MOSFET Drivers |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,82 | $1,55 |
| Driver Type | Single-channel high-side TDI gate driver | Half-Bridge (High-Side / Low-Side) |
| Maximum Blocking Voltage | 200 V | — |
| Input Configuration | Truly differential (TDI) | — |
| Output Current (Source / Sink) | 1.5 A / 2.5 A | — |
| Propagation Delay | [DATA_NEEDED: typical propagation delay ns] | — |
| Время нарастания | [DATA_NEEDED: typical rise time ns] | — |
| Время спада | [DATA_NEEDED: typical fall time ns] | — |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC range V] | — |
| Диапазон рабочих температур | -40C to +125C | — |
| Корпус | PG-VSON-1 (6-pin with exposed pad) | PG-VDSON-10-2 (DSN-10) with exposed pad |
| Тип монтажа | Surface Mount | Surface Mount |
| Target Transistor | GaN SG HEMT or power MOSFET | — |
| Уровень MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Статус RoHS | Compliant | — |
| Topology Support | Half-bridge, low-side, high-side | — |
| Configuration | — | Non-Inverting |
| Bootstrap Voltage (Max) | — | 120 V |
| Peak Source Current | — | 3 A |
| Peak Sink Current | — | 4 A |
| Количество выходов | — | 2 |
| Rise Time (Typical) | — | [DATA_NEEDED: rise time ns] |
| Fall Time (Typical) | — | [DATA_NEEDED: fall time ns] |
| Propagation Delay (Typical) | — | [DATA_NEEDED: propagation delay ns] |
| Input Logic Compatibility | — | 3.3 V / 5 V |
| VCC Supply Voltage | — | [DATA_NEEDED: VCC range V] |
| UVLO Protection | — | Yes (VCC and VBS) |
| Isolation Type | — | Junction-isolated (level-shifted) |
| ESD Rating (HBM) | — | [DATA_NEEDED: ESD HBM kV] |
| Рабочая температура перехода | — | -40 C to +125 C |
| Lead-Free / RoHS | — | Yes (per Infineon product page) |