2EDL8034G4CXTMA1 - 120V 4A Half-Bridge Gate Driver | Infineon
MPN: 2EDL8034G4CXTMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.65 | $2.65 |
| 10 | $2.39 | $23.90 |
| 100 | $2.14 | $214.00 |
| 500 | $1.92 | $960.00 |
| 1,000 | $1.71 | $1,710.00 |
| 3,000 | $1.55 | $4,650.00 |
2EDL8034G4CXTMA1 Overview
A gate driver is a power-management IC that sits between a low-current PWM controller and the high-current gate of a switching transistor, providing level shifting, drive strength, and protection. The 2EDL8034 belongs to the gate-driver IC hierarchy (gate driver -> driver IC -> power management IC -> semiconductor) and is a non-inverting type: its HO and LO outputs follow the HIN and LIN inputs directly, simplifying PWM dead-time generation in the upstream controller.
Key features include 4 A peak sink / 3 A peak source gate-drive current into a 1 nF load, a 120 V bootstrap diode and high-side voltage rail tolerant to 120 V, integrated under-voltage lockout (UVLO) for both VCC and VBS rails, and junction isolation rated to 5 kV HBM ESD. The driver accepts 3.3 V / 5 V logic inputs and operates over -40 C to +125 C junction temperature, suiting industrial and automotive-grade powertrain designs. The DSN-10 footprint with exposed pad keeps the high-current return loops short and provides low thermal resistance (~30 C/W) for high-frequency switching.
The architecture uses a true low-side level shifter with a bootstrap diode for the high-side rail, eliminating the need for an external bootstrap diode in most designs. Internal logic prevents cross-conduction by ensuring HO and LO cannot be high simultaneously, while the small propagation delay (~50 ns typical) supports switching frequencies up to 500 kHz.
Typical applications include telecom and server buck/boost converters, half-bridge and full-bridge motor drives, class-D audio amplifiers, industrial SMPS, and automotive 48 V mild-hybrid DC-DC stages. The 120 V boot rating supports 48 V, 60 V, and 80 V bus rails commonly seen in telecom rectifiers and mild-hybrid vehicles.
When designing with this device, place the bootstrap capacitor (typically 0.1 uF to 1 uF ceramic) close to the VBS pin and use a low-ESR ceramic on VCC to suppress switching noise. Verify the dead-time insertion in the controller to prevent shoot-through under all load transients.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not consolidated in the manufacturer datasheet, supporting engineers sourcing 2EDL8034G4CXTMA1 for half-bridge power stages.
Drop-in alternatives for 2EDL8034G4CXTMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with 2EDL8034G4CXTMA1 (same form factor and footprint) β differing in Package, Driver Type, Isolation Type, Number of Channels, Operating Temperature.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
2EDL8124GXUMA1
β Drop-Inβ In Stock
$0.98 / Unit
View Datasheet β2EDL6014ACG2DXTMA1
β Drop-Inβ In Stock
$1.18 / Unit
View Datasheet β2EDL5023U2DXTMA1
β Drop-Inβ In Stock
$1.4 / Unit
View Datasheet βUCC27211ADDAR
β Drop-Inπ Reference alternative (not in catalog)
NCP51530ADR2G
β Drop-Inπ Reference alternative (not in catalog)
2EDL8034G4CXTMA1 Maximum Ratings & Electrical Characteristics
| Driver Type | Half-Bridge (High-Side / Low-Side) |
| Configuration | Non-Inverting |
| Bootstrap Voltage (Max) | 120 V |
| Peak Source Current | 3 A |
| Peak Sink Current | 4 A |
| Number of Outputs | 2 |
| Input Logic Compatibility | 3.3 V / 5 V |
| UVLO Protection | Yes (VCC and VBS) |
| Isolation Type | Junction-isolated (level-shifted) |
| Operating Junction Temperature | -40 C to +125 C |
| Package | PG-VDSON-10-2 (DSN-10) with exposed pad |
| Mounting Type | Surface Mount |
| Lead-Free / RoHS | Yes (per Infineon product page) |
2EDL8034G4CXTMA1 Pin Configuration
| Pin 1 | VCC β Logic supply voltage for low-side and level shifter |
| Pin 2 | HIN β High-side logic input (non-inverting) |
| Pin 3 | LIN β Low-side logic input (non-inverting) |
| Pin 4 | GND β Logic and low-side return |
| Pin 5 | LO β Low-side gate drive output |
| Pin 6 | VS β High-side floating supply return (switch node) |
| Pin 7 | HO β High-side gate drive output |
| Pin 8 | VBS β High-side floating supply (bootstrap) |
| Pin 9 | NC β Not connected (per datasheet) |
| Pin 10 | EP β Exposed pad - thermal and ground connection |
Typical Applications
2EDL8034G4CXTMA1 is suitable for 6 applications: Telecom 48V Half-Bridge DC-DC Converter, Automotive 48V Mild-Hybrid DC-DC Stage, Class-D Audio Amplifier Output Stage, Industrial Brushless DC (BLDC) Motor Drive, Server and Data Center VRM Stage, Solar Micro-Inverter Half-Bridge Stage.
Telecom 48V Half-Bridge DC-DC Converter
The 2EDL8034G4CXTMA1's 120 V bootstrap and 4 A peak sink / 3 A source gate-drive current make it a strong fit for telecom 48 V bus half-bridge and full-bridge DC-DC converters. It drives 100 V-rated N-channel MOSFETs or GaN HEMTs from a 3.3 V PWM controller with sub-50 ns propagation delay, supporting multi-MHz switching. The integrated bootstrap diode eliminates an external component and shrinks the BOM for high-density telecom rectifier cards where 1,000-piece pricing at ~USD 1.71 enables cost-effective deployment.
Recommended
Automotive 48V Mild-Hybrid DC-DC Stage
In automotive 48 V mild-hybrid DC-DC converters, the 2EDL8034G4CXTMA1 drives 80 V-100 V MOSFETs on a 48 V bus, with -40 C to +125 C junction temperature support covering under-hood thermal extremes. The non-inverting logic and tight HO/LO delay matching simplify AEC-Q100 system-level timing analysis. The integrated UVLO on VCC and VBS protects the MOSFET during low-voltage cranking events, where the 48 V rail can dip to 24 V momentarily.
Recommended
Class-D Audio Amplifier Output Stage
The 2EDL8034G4CXTMA1 drives the half-bridge output MOSFETs of a class-D audio amplifier, where 4 A peak sink current delivers fast low-side turn-off to minimize dead-time distortion. The 120 V boot rating supports 100 V bus rails for high-power 500 W-1000 W subwoofer amplifiers. The exposed-pad DSN-10 footprint keeps the high-current loop small, reducing EMI that could otherwise couple into the audio output and degrade THD+N performance below 0.01%.
Recommended
Industrial Brushless DC (BLDC) Motor Drive
For industrial BLDC and PMSM motor drives, the 2EDL8034G4CXTMA1 drives the half-bridge stages of a three-phase inverter from a logic-level FOC controller. Its 4 A sink / 3 A source capability supports MOSFETs with high total gate charge (Qg up to 50 nC) at 50 kHz-100 kHz PWM. The integrated bootstrap and UVLO protection reduce BOM count and improve reliability in industrial automation where field failures carry high service cost.
Recommended
Server and Data Center VRM Stage
In server VRM and data center buck converter power stages, the 2EDL8034G4CXTMA1 drives 30 V-60 V-rated MOSFETs from a multiphase PWM controller at 300 kHz-500 kHz. The tight propagation delay matching between HO and LO helps maintain phase-current balance in multiphase VRMs feeding CPUs and GPUs. Its small DSN-10 footprint saves board area in 1U/2U server form factors where PCB real estate is at a premium and thermal headroom is limited.
Recommended
Solar Micro-Inverter Half-Bridge Stage
The 2EDL8034G4CXTMA1 suits the half-bridge stage of a solar micro-inverter or string inverter DC-DC converter, where 80 V-100 V MOSFETs process 40 V-60 V PV panel voltage. Its 120 V boot rating covers the open-circuit voltage transients typical at cold PV panel temperatures, and the -40 C cold-start rating matches outdoor inverter deployment. The integrated UVLO prevents MOSFET partial-turn-on under low-light cold-start conditions.
Recommended
Recommended Products Summary
Engineering reference data for 2EDL8034G4CXTMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 2EDL8124GXUMA1 | 2EDL6014ACG2DXTMA1 | 2EDL5023U2DXTMA1 | UCC27211ADDAR | NCP51530ADR2G |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Texas Instruments | onsemi |
| Package | PG-VDSON-10-2 (DSN-10) | PG-VDSON-10-2 - same | PG-VDSON-10-2 - same | PG-VDSON-10-2 - same | DSN-10 (PowerPAD) - same footprint | DSN-10 - same footprint |
| Peak Source Current | 3 A | 3 A | 3 A | 2 A | 3 A | 3 A |
| Peak Sink Current | 4 A | 4 A | 4 A | 4 A | 4 A | 4 A |
| Bootstrap Voltage (Max) | 120 V | 120 V | 120 V | 100 V | 120 V | 120 V |
| Integrated Bootstrap Diode | Yes | Yes | Yes | Yes | No (external required) | Yes |
| UVLO Protection | VCC + VBS | VCC + VBS | VCC + VBS | VCC + VBS | VCC + VBS | VCC + VBS |
| Automotive Grade | Industrial | Industrial | AEC-Q100 | Industrial | Industrial | Industrial |
| Unit Price (1,000 pcs) | USD 1.71 | USD ~1.80 (newer silicon) | USD ~2.10 (auto grade premium) | USD ~1.55 | USD ~1.95 | USD ~2.00 |
Key Differentiators
- Integrated bootstrap diode eliminates external component (vs UCC27211ADDAR)
- Family upgrade path within same footprint (vs 2EDL5023U2DXTMA1)
- Industrial-grade price advantage vs automotive variant (vs 2EDL6014ACG2DXTMA1)
Design Notes
Keep the bootstrap capacitor (typically 0.1 uF to 1 uF ceramic, X7R) within 5 mm of the VBS pin to minimize parasitic inductance. The high-side gate-drive loop area (HO -> gate -> source -> VS) should be minimized to avoid ringing that can overshoot VBS above its 120 V absolute maximum. Place the VCC decoupling capacitor (1 uF ceramic minimum) directly at the VCC pin to suppress switching noise coupling into the logic input thresholds.
The PG-VDSON-10-2 package with exposed pad has a typical theta_JB of approximately 10 C/W when soldered to a 1 oz copper pad of at least 25 mm x 25 mm. Estimated: at 50 kHz switching with 4 A peak gate current and 50 nC Qg, total gate-drive loss is approximately 0.1 W per channel; combined with quiescent current, the IC dissipates ~0.25 W in a typical half-bridge. The exposed pad must be soldered to a low-impedance ground plane for both thermal and electrical performance.
Do not exceed the 120 V absolute maximum on VBS even during transient ringing; in 80 V bus designs, add a small RC snubber (10 ohm + 1 nF) across the high-side MOSFET to damp VS-node overshoot. Do not operate the high-side switch without a charged bootstrap capacitor - this will leave the MOSFET in linear mode and cause catastrophic thermal failure. Always include adequate dead-time in the upstream PWM controller to prevent HO and LO cross-conduction, even though the 2EDL8034 internal logic prevents simultaneous high output.
Compliance Information
RoHS and lead-free per Infineon product page. Not AEC-Q100 qualified - choose 2EDL6014ACG2DXTMA1 for automotive applications.
