1EDN7146UXTSA1 vs 2EDN7533RXTMA1 Comparison

Detailed side-by-side comparison of 1EDN7146UXTSA1 by Infineon and 2EDN7533RXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 1EDN7146UXTSA1 2EDN7533RXTMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Driver Type Single-channel high-side TDI gate driver —
Maximum Blocking Voltage 200 V —
Input Configuration Truly differential (TDI) —
Output Current (Source / Sink) 1.5 A / 2.5 A —
Propagation Delay [DATA_NEEDED: typical propagation delay ns] —
Rise Time [DATA_NEEDED: typical rise time ns] —
Fall Time [DATA_NEEDED: typical fall time ns] —
Supply Voltage (VCC) [DATA_NEEDED: VCC range V] —
Operating Temperature Range -40C to +125C —
Package PG-VSON-1 (6-pin with exposed pad) PG-TSSOP-8 (HTSSOP) with exposed pad
Mounting Type Surface Mount Surface Mount
Target Transistor GaN SG HEMT or power MOSFET —
MSL Level [DATA_NEEDED: MSL rating] —
RoHS Status Compliant Compliant
Topology Support Half-bridge, low-side, high-side —
Function — Dual-channel low-side gate driver
Number of Channels — 2
Input Polarity — Inverting
Peak Source/Sink Output Current — 5 A
Output Resistance (Pull-up, typ.) — 0.5 ohm
Output Resistance (Pull-down, typ.) — 0.3 ohm
Propagation Delay (typ.) — 19 ns
Channel-to-Channel Delay Matching — 1.3 ns (typ.)
Rise/Fall Time — 1.7 ns / 1.5 ns (typ., 1 nF load)
Input Logic Compatibility — LV-TTL
Input Voltage Tolerance — -12 V to +22 V
Supply Voltage VDD (recommended) — 4.5 V to 20 V
Supply Voltage VDD (absolute max) — 25 V
Under-Voltage Lockout — Yes (per channel)
Operating Junction Temperature — -40 C to +150 C

Datasheets & Resources

Browse All Products Create BOM Request Quote