1EDN7146UXTSA1 vs 2EDN7533RXTMA1 Comparison
Detailed side-by-side comparison of 1EDN7146UXTSA1 by Infineon and 2EDN7533RXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
1EDN7146UXTSA1
1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon
1EDN7146UXTSA1 β Active
Specification Comparison
| Parameter | 1EDN7146UXTSA1 | 2EDN7533RXTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $0.55 |
| Driver Type | Single-channel high-side TDI gate driver | β |
| Maximum Blocking Voltage | 200 V | β |
| Input Configuration | Truly differential (TDI) | β |
| Output Current (Source / Sink) | 1.5 A / 2.5 A | β |
| Propagation Delay | [DATA_NEEDED: typical propagation delay ns] | β |
| Rise Time | [DATA_NEEDED: typical rise time ns] | β |
| Fall Time | [DATA_NEEDED: typical fall time ns] | β |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC range V] | β |
| Operating Temperature Range | -40C to +125C | β |
| Package | PG-VSON-1 (6-pin with exposed pad) | PG-TSSOP-8 (HTSSOP) with exposed pad |
| Mounting Type | Surface Mount | Surface Mount |
| Target Transistor | GaN SG HEMT or power MOSFET | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| RoHS Status | Compliant | Compliant |
| Topology Support | Half-bridge, low-side, high-side | β |
| Function | β | Dual-channel low-side gate driver |
| Number of Channels | β | 2 |
| Input Polarity | β | Inverting |
| Peak Source/Sink Output Current | β | 5 A |
| Output Resistance (Pull-up, typ.) | β | 0.5 ohm |
| Output Resistance (Pull-down, typ.) | β | 0.3 ohm |
| Propagation Delay (typ.) | β | 19 ns |
| Channel-to-Channel Delay Matching | β | 1.3 ns (typ.) |
| Rise/Fall Time | β | 1.7 ns / 1.5 ns (typ., 1 nF load) |
| Input Logic Compatibility | β | LV-TTL |
| Input Voltage Tolerance | β | -12 V to +22 V |
| Supply Voltage VDD (recommended) | β | 4.5 V to 20 V |
| Supply Voltage VDD (absolute max) | β | 25 V |
| Under-Voltage Lockout | β | Yes (per channel) |
| Operating Junction Temperature | β | -40 C to +150 C |