1EDN7146UXTSA1 vs 2EDN7533RXTMA1 对比

详细并排对比 1EDN7146UXTSA1 出自 Infineon 和 2EDN7533RXTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
1EDN7146UXTSA1 1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon

1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon

1EDN7146UXTSA1 ✓ 量产中
Infineon
2EDN7533RXTMA1 2EDN7533RXTMA1 - Dual 5A Low-Side Gate Driver | Infineon

2EDN7533RXTMA1 - Dual 5A Low-Side Gate Driver | Infineon

2EDN7533RXTMA1 ✓ 量产中

规格对比

参数 1EDN7146UXTSA1 2EDN7533RXTMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.82 $0.55
Driver Type Single-channel high-side TDI gate driver —
Maximum Blocking Voltage 200 V —
Input Configuration Truly differential (TDI) —
Output Current (Source / Sink) 1.5 A / 2.5 A —
Propagation Delay [DATA_NEEDED: typical propagation delay ns] —
上升时间 [DATA_NEEDED: typical rise time ns] —
下降时间 [DATA_NEEDED: typical fall time ns] —
Supply Voltage (VCC) [DATA_NEEDED: VCC range V] —
工作温度范围 -40C to +125C —
封装 PG-VSON-1 (6-pin with exposed pad) PG-TSSOP-8 (HTSSOP) with exposed pad
安装类型 Surface Mount Surface Mount
Target Transistor GaN SG HEMT or power MOSFET —
MSL 等级 [DATA_NEEDED: MSL rating] —
RoHS 状态 Compliant Compliant
Topology Support Half-bridge, low-side, high-side —
功能 — Dual-channel low-side gate driver
Number of Channels — 2
Input Polarity — Inverting
Peak Source/Sink Output Current — 5 A
Output Resistance (Pull-up, typ.) — 0.5 ohm
Output Resistance (Pull-down, typ.) — 0.3 ohm
Propagation Delay (typ.) — 19 ns
Channel-to-Channel Delay Matching — 1.3 ns (typ.)
Rise/Fall Time — 1.7 ns / 1.5 ns (typ., 1 nF load)
Input Logic Compatibility — LV-TTL
Input Voltage Tolerance — -12 V to +22 V
Supply Voltage VDD (recommended) — 4.5 V to 20 V
Supply Voltage VDD (absolute max) — 25 V
Under-Voltage Lockout — Yes (per channel)
工作结温 — -40 C to +150 C

数据手册与资源

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