1EDN7550BXTSA1 vs 1EDN7511BXUSA1 Comparison
Detailed side-by-side comparison of 1EDN7550BXTSA1 by Infineon and 1EDN7511BXUSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
1EDN7550BXTSA1 - 4A/8A Single-Channel Gate Driver, SOT-23-6 | Infineon
1EDN7550BXTSA1 β ActiveSpecification Comparison
| Parameter | 1EDN7550BXTSA1 | 1EDN7511BXUSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.59 | $0.54 |
| Driver Configuration | Single-channel, high-side / low-side | β |
| Input Type | Non-inverting, truly differential | β |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 8 A | 8 A |
| Supply Voltage (VDD max) | 84 V | β |
| Minimum Input Pulse Width | 29 ns | β |
| Propagation Delay (typ.) | [DATA_NEEDED: propagation delay value] | β |
| Input Common-Mode Range | Up to 150 V | β |
| Channel-to-Channel Matching | 1.0 ns typ. | β |
| Internal Regulator | 4.7 V on input side | β |
| Logic Input Compatibility | TTL / CMOS | β |
| Under-Voltage Lockout (UVLO) | Yes | β |
| Operating Junction Temperature | -40 Β°C to +150 Β°C | β |
| Package | PG-SOT23-6 (SOT-23-6) | PG-SOT23-6-2 (6-pin SOT-23) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL level] | MSL1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Driver Type | β | Low-Side, Single Channel |
| Number of Channels | β | 1 |
| Output Configuration | β | Inverting / Non-Inverting (2 outputs) |
| Input Logic | β | TTL / CMOS compatible |
| Propagation Delay | β | [DATA_NEEDED: typical propagation delay in ns] |
| Delay Matching | β | Β±5 ns |
| Rise / Fall Time | β | [DATA_NEEDED: rise/fall time into 1 nF load] |
| Supply Voltage (VCC) | β | [DATA_NEEDED: VCC min/max range] |
| UVLO Protection | β | Yes |
| Operating Temperature | β | -40 Β°C to +150 Β°C |
| Lead-Free | β | Yes |
| Supported Switch Technologies | β | MOSFET, GaN FET |