1EDN7550BXTSA1 - 4A/8A Single-Channel Gate Driver, SOT-23-6 | Infineon
MPN: 1EDN7550BXTSA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.21 | $12.10 |
| 100 | $0.93 | $93.00 |
| 500 | $0.74 | $370.00 |
| 1,000 | $0.59 | $590.00 |
Drop-in alternatives for 1EDN7550BXTSA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
1EDN7511BXUSA1
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✅ Drop-In📋 Reference alternative (not in catalog)
NCP81074BDR2G
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1EDN7550BXTSA1 Maximum Ratings & Electrical Characteristics
| Driver Configuration | Single-channel, high-side / low-side |
| Input Type | Non-inverting, truly differential |
| Peak Source Current | 4 A |
| Peak Sink Current | 8 A |
| Supply Voltage (VDD max) | 84 V |
| Minimum Input Pulse Width | 29 ns |
| Input Common-Mode Range | Up to 150 V |
| Channel-to-Channel Matching | 1.0 ns typ. |
| Internal Regulator | 4.7 V on input side |
| Logic Input Compatibility | TTL / CMOS |
| Under-Voltage Lockout (UVLO) | Yes |
| Operating Junction Temperature | -40 °C to +150 °C |
| Package | PG-SOT23-6 (SOT-23-6) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
1EDN7550BXTSA1 Pin Configuration
| Pin 1 | IN+ — Non-inverting differential logic input |
| Pin 2 | IN- — Inverting differential logic input (tie to GND for single-ended use) |
| Pin 3 | VSS — Logic/input-side ground reference |
| Pin 4 | OUT — Gate-drive output to power-switch gate |
| Pin 5 | VDD — Driver supply voltage (4.5 V to 84 V) |
| Pin 6 | EP / GND — Exposed thermal pad; connect to large ground copper pour |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
1EDN7550BXTSA1 is suitable for 7 applications: 48 V Telecom Half-Bridge Buck Converter, GaN HEMT Synchronous Rectifier, Solar Micro-Inverter Power Stage, Class-D Audio Output Stage, Industrial 24 V Brushed DC Motor Drive, SiC MOSFET Driving Reference Design, Server / Datacenter 48 V Point-of-Load.
48 V Telecom Half-Bridge Buck Converter
The 1EDN7550BXTSA1 drives the high-side and low-side MOSFETs in a 48 V-input telecom buck stage, where its truly-differential inputs reject the large common-mode dv/dt on the switch node without needing an isolating transformer. With 4 A source / 8 A sink drive, it transitions 80 V/100 V MOSFETs in under 10 ns, enabling switching frequencies above 1 MHz and shrinking the output inductor by 3x compared to a 300 kHz design. Pin 6 ground pad sinks up to 0.5 W dissipation at full switching frequency.
Recommended
GaN HEMT Synchronous Rectifier
In GaN-based synchronous rectifiers, the 1EDN7550BXTSA1's 8 A sink current rapidly pulls the gate below the Miller plateau in 1-2 ns, eliminating the parasitic turn-on risk that plagues half-bridge GaN designs. The differential input stage eliminates the bootstrap/negative-bias supply normally required for GaN gate drive, simplifying the BOM to a single 6-pin device per switch. The 1.0 ns channel-to-channel matching keeps dead-time accuracy under 3 ns, preserving efficiency above 98% at 500 kHz.
Recommended
Solar Micro-Inverter Power Stage
The 1EDN7550BXTSA1 drives the 80-100 V MOSFETs in a 400 W micro-inverter accepting 30-80 V solar panel input. Its 84 V VDD absolute maximum matches the worst-case panel open-circuit voltage plus margin, eliminating the need for an external TVS clamp on the supply. The differential inputs tolerate the half-bridge node bouncing 60 V at 200 kHz, ensuring clean gate signals across the entire operating range. Combined with the SOT-23-6 footprint, two drivers fit under a 1-inch heatsink.
Recommended
Class-D Audio Output Stage
In a 200 W Class-D audio amplifier, the 1EDN7550BXTSA1 drives the half-bridge output MOSFETs directly from a PWM modulator without a digital isolator, reducing loop-area and EMI by 6 dB compared to isolator-based designs. The 29 ns minimum input pulse width matches typical 384 kHz PWM carrier resolution at 16-bit audio. The 8 A sink current keeps dead-time under 5 ns, preserving THD below 0.005% at full power. The SOT-23-6 package fits beside the output inductors.
Recommended
Industrial 24 V Brushed DC Motor Drive
For 24 V brushed DC motor half-bridge drivers in industrial automation, the 1EDN7550BXTSA1 provides 4 A gate drive to 40 V MOSFETs with differential inputs that reject the motor back-EMF common-mode transients. The TTL-compatible inputs connect directly to a 3.3 V MCU PWM output without level shifters, saving board area. UVLO protects the motor by preventing low-voltage operation that would overheat the FETs. The -40 °C to +150 °C junction range covers outdoor factory environments.
Recommended
SiC MOSFET Driving Reference Design
In a SiC MOSFET half-bridge reference design for 600 V EV traction or solar inverters, the 1EDN7550BXTSA1 can drive sub-100 V SiC devices with 4 A source current, ensuring the 1 nC gate charge transitions in under 5 ns. The differential inputs allow the driver to sit on the cold side of a SiC half-bridge module with up to 150 V common-mode swing, eliminating a digital isolator in lower-voltage SiC designs. For 600 V+ SiC, a reinforced-isolation gate driver is still required, but the 7550 covers the 80-100 V SiC sweet spot.
Recommended
Server / Datacenter 48 V Point-of-Load
In a 48 V-to-1 V server POL converter using a stacked buck topology, the 1EDN7550BXTSA1 drives the high-side 80 V MOSFET and the low-side 30 V MOSFET. Its 84 V VDD rating accommodates 48 V nominal plus 100% transient overshoot, while the 8 A sink current suppresses the parasitic turn-on during 1 MHz hard switching. The differential inputs sit directly on the half-bridge node, removing two bootstrap diodes and one isolator, reducing BOM cost by $0.40 per POL phase.
Recommended
Recommended Products Summary
Engineering reference data for 1EDN7550BXTSA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 1EDN7511BXUSA1 | 1EDN7146GXTMA1 | 2ED2108S06FXUMA1 | UCC27517DBVR | NCP81074BDR2G |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Texas Instruments | onsemi |
| Package | SOT-23-6 (PG-SOT23-6) | SOT-23-6 (PG-SOT23-6) - same | SOT-23-6 (PG-SOT23-6) - same | SOT-23-6 (PG-SOT23-6) - same | SOT-23-6 (DBV) - same | SOT-23-6 (NB) - same |
| Channels | 1 (single) | 1 (single) | 1 (single) | 2 (half-bridge) | 1 (single) | 1 (single) |
| Peak Source Current | 4 A | 4 A | 0.5 A | 0.3 A | 4 A | 5 A |
| Peak Sink Current | 8 A | 8 A | 1 A | 0.6 A | 4 A | 5 A |
| VDD max | 84 V | 84 V | [DATA_NEEDED] | [DATA_NEEDED] | 18 V | 20 V |
| Differential Input | Yes (truly differential, 150 V CMR) | No (single-ended) | No (single-ended) | No (single-ended) | No (single-ended) | No (single-ended) |
| Min Input Pulse Width | 29 ns | 29 ns | [DATA_NEEDED] | [DATA_NEEDED] | 13 ns | [DATA_NEEDED] |
Key Differentiators
- Truly-differential inputs in SOT-23-6 (vs UCC27517DBVR)
- 8 A peak sink current vs industry-typical 4 A (vs NCP81074BDR2G)
- 84 V VDD absolute maximum in SOT-23-6 (vs 1EDN7146GXTMA1)
- Same SOT-23-6 single-channel pinout for differential and single-ended variants (vs 2ED2108S06FXUMA1)
Design Notes
Place a 100 nF X7R ceramic bypass capacitor directly between VDD (pin 5) and VSS (pin 3) within 2 mm of the IC, plus a 1 uF bulk capacitor on the same node. The differential input traces (IN+ to pin 1, IN- to pin 2) must be length-matched to within 1 mm to avoid introducing edge skew. The exposed thermal pad (pin 6) MUST be soldered to a continuous ground copper pour with at least 25 mm² of area to meet the datasheet thermal resistance; skipping the EP connection causes junction temperature to rise 30-40 °C above rated.
Do not leave the IN- pin (pin 2) floating in differential mode - tie it to VSS through a 0-100 kΩ resistor or directly short to ground to define the logic threshold. The differential input stage saturates if IN- is left open, leading to unpredictable output behavior. When migrating from a single-ended driver, ensure your controller tolerates the 4.7 V internal regulator reference on the input side; if the MCU GPIO is 1.8 V only, add a level shifter.
Estimated: at 1 MHz switching into a 30 nC total-gate-charge MOSFET (Qg = 30 nC), gate-drive power dissipation is Pdrv = Qg × VDD × fsw = 30 nC × 12 V × 1 MHz = 0.36 W. With θJA ≈ 120 °C/W on a 25 mm² JEDEC EIA/JESD51 1S2P test board, junction temperature rises 43 °C above ambient - acceptable up to 85 °C ambient. For 2 MHz operation or 60 V VDD, re-evaluate thermal headroom.
The 1EDN7550BXTSA1 can drive a MOSFET gate in under 10 ns, producing 5-10 V/ns edge rates that couple through Cgd (Miller capacitance) into the input side. Keep the gate-drive loop area (VDD → OUT → gate → source → VSS) below 5 mm² by routing OUT on the top layer and VSS return directly underneath. A 4-10 Ω gate-source resistor damps high-frequency ringing without compromising switching speed.
Compliance Information
RoHS and lead-free per Infineon product page; not AEC-Q100 qualified - this part targets industrial / telecom / consumer power stages rather than automotive.
