1EDN7511BXUSA1 - 4A/8A Low-Side Gate Driver | Infineon
MPN: 1EDN7511BXUSA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.86 | $86.00 |
| 500 | $0.71 | $355.00 |
| 1,000 | $0.62 | $620.00 |
| 3,000 | $0.54 | $1,620.00 |
Drop-in alternatives for 1EDN7511BXUSA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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1EDN7511BXUSA1 Maximum Ratings & Electrical Characteristics
| Driver Type | Low-Side, Single Channel |
| Number of Channels | 1 |
| Peak Source Current | 4 A |
| Peak Sink Current | 8 A |
| Output Configuration | Inverting / Non-Inverting (2 outputs) |
| Input Logic | TTL / CMOS compatible |
| Delay Matching | Β±5 ns |
| UVLO Protection | Yes |
| Operating Temperature | -40 Β°C to +150 Β°C |
| Package | PG-SOT23-6-2 (6-pin SOT-23) |
| Mounting Type | Surface Mount |
| MSL Level | MSL1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| Supported Switch Technologies | MOSFET, GaN FET |
1EDN7511BXUSA1 Pin Configuration
| Pin 1 | VCC β Driver supply voltage; place 100 nF ceramic bypass to GND close to this pin. |
| Pin 2 | IN+ β Non-inverting logic input (TTL/CMOS compatible). |
| Pin 3 | IN- β Inverting logic input (TTL/CMOS compatible); tie to VCC when not used. |
| Pin 4 | OUT_SINK β Open-drain pull-down output (8 A peak sink). |
| Pin 5 | OUT_SRC β Open-drain pull-up output (4 A peak source). |
| Pin 6 | GND β Ground reference for logic inputs and driver outputs. |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
1EDN7511BXUSA1 is suitable for 6 applications: High-Frequency Synchronous Buck Converter, Class-D Audio Amplifier Half-Bridge, 48 V GaN-Based Point-of-Load Converter, Solar Micro-Inverter Power Stage, USB-PD Adapter Primary-Side Switch Driver, BLDC Motor Drive Low-Side Position.
High-Frequency Synchronous Buck Converter
The 1EDN7511BXUSA1 drives the low-side synchronous rectifier MOSFET in a high-frequency buck converter where switching losses in the 1-3 MHz range dictate overall efficiency. The driver's 8 A sink current rapidly discharges the synchronous-FET gate charge during turn-off, minimizing the dead-time conduction loss in the body diode and enabling sub-15 ns dead-time design. Placed adjacent to the SR MOSFET with a 100 nF VCC bypass capacitor and a 2-5 ohm gate resistor to dampen parasitic ringing, it supports >96% peak efficiency in 48 V to point-of-load designs typical of telecom bricks. Unlike a half-bridge driver, the 1EDN7511BXUSA1's single-channel topology avoids the cost of an unused bootstrap circuit, reducing BOM cost per phase.
Recommended
Class-D Audio Amplifier Half-Bridge
In a Class-D audio amplifier, the 1EDN7511BXUSA1 drives the low-side power MOSFET of each output half-bridge, where switching frequency typically ranges from 250 kHz to 1 MHz. The driver's Β±5 ns delay matching between inverting and non-inverting outputs keeps channel-to-channel timing skew minimal, preserving THD+N performance below 0.01% in audiophile-grade designs. The 4 A source current charges the gate capacitance quickly enough to keep switching losses low, while the 8 A sink capability ensures clean Miller-platform turn-off that prevents shoot-through. With a small 100 nF X7R bypass capacitor on VCC and a 1 oz copper gate-drive trace, the device supports >92% efficiency at 100 W output into 4 ohms, suitable for home-theater and portable speaker applications.
Recommended
48 V GaN-Based Point-of-Load Converter
The 1EDN7511BXUSA1 is well-matched to drive the low-side GaN FET in a 48 V to 1 V point-of-load converter for data-center and server applications. GaN switches demand sub-10 ns gate transitions to minimize switching losses, and the 1EDN7511BXUSA1's 4 A source / 8 A sink output stage achieves rise times below 5 ns into a typical 1 nC Qg GaN gate load. The rail-to-rail low-impedance output stage produces clean gate waveforms even at multi-MHz switching frequencies where parasitic inductance would otherwise cause oscillation. Per the Infineon 1EDN7511B datasheet, the device's short propagation delay supports the deterministic timing required for adaptive dead-time control in high-density 48 V direct-conversion designs targeting >95% peak efficiency.
Recommended
Solar Micro-Inverter Power Stage
The 1EDN7511BXUSA1 drives the low-side IGBT or MOSFET in a single-phase solar micro-inverter operating at 50-100 kHz switching frequency, where gate-drive losses and switching losses together limit inverter efficiency to below the 96% CEC-weighted efficiency required for residential PV installations. The driver's 4 A source current charges the IGBT gate quickly enough to minimize turn-on switching loss, while the 8 A sink handles the high di/dt turn-off transient that would otherwise produce large dv/dt-induced EMI. With a 100 nF VCC bypass capacitor placed within 5 mm of the IC and a tight gate-drive loop, the 1EDN7511BXUSA1 supports robust operation across the -40 Β°C to +150 Β°C automotive-grade temperature range demanded by outdoor solar installations.
Recommended
USB-PD Adapter Primary-Side Switch Driver
The 1EDN7511BXUSA1 drives the primary-side low-side MOSFET in a USB-Power-Delivery adapter where high switching frequency (65-130 kHz) and high efficiency (>93%) must coexist in a compact 65-100 W form factor. The driver's TTL-compatible input accepts the 0-5 V logic directly from the secondary-side feedback optocoupler circuit, eliminating the need for an additional level-shifter. The 8 A sink rating quickly turns off the primary switch, limiting cross-conduction loss and supporting high-frequency quasi-resonant topologies. With the device's UVLO protection and Β±5 ns delay precision, the adapter achieves clean zero-voltage-switching transitions across the full USB-PD voltage range from 5 V to 20 V output at up to 5 A load current.
Recommended
BLDC Motor Drive Low-Side Position
The 1EDN7511BXUSA1 drives the low-side MOSFET of each phase leg in a brushless-DC motor-drive inverter for industrial fans, pumps, and small traction drives up to 1 kW. The driver's 4 A source current and 8 A sink current provide the asymmetric drive needed to control turn-on and turn-off dI/dt independently via separate gate resistors, reducing ringing on the motor phase nodes without sacrificing switching speed. The 6-pin SOT-23 footprint is small enough to place three drivers adjacent to a small 3-phase MOSFET footprint in a 50 mm x 50 mm PCB. According to the Infineon 1EDN7511B datasheet, the device's Β±5 ns delay matching supports 50 kHz PWM frequencies with deterministic dead-time insertion, critical for safe commutation in sensorless FOC motor-control algorithms.
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Recommended Products Summary
Engineering reference data for 1EDN7511BXUSA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 1EDN7512BXUSA1 | 1EDN8511CXUSA1 | UCC27611DRVR | NCP81071AZR2G |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Texas Instruments | onsemi |
| Package | PG-SOT23-6-2 | PG-SOT23-6-2 - same | PG-SOT23-6-2 - same | SON-6 (DRV) - same footprint family | SOT-23-6 - same |
| Peak Source Current | 4 A | 4 A | 5 A | 4 A | 4 A |
| Peak Sink Current | 8 A | 8 A | 9 A | 4 A (-50%) | 4 A (-50%) |
| Propagation Delay | [DATA_NEEDED] | Similar to 1EDN7511 | Lower delay, Β±3 ns match | [DATA_NEEDED] | [DATA_NEEDED] |
| Delay Matching | Β±5 ns | Β±5 ns | Β±3 ns | [DATA_NEEDED] | [DATA_NEEDED] |
| UVLO Protection | Yes | Yes | Yes | Yes | Yes |
| Operating Temperature | -40 Β°C to +150 Β°C | -40 Β°C to +150 Β°C | -40 Β°C to +150 Β°C | -40 Β°C to +125 Β°C | -40 Β°C to +125 Β°C |
| Switch Technology | MOSFET, GaN | MOSFET, GaN | MOSFET, GaN | MOSFET, GaN | MOSFET |
Key Differentiators
- Asymmetric source/sink drive current optimized for GaN (vs UCC27611DRVR)
- Separate inverting and non-inverting logic inputs (vs NCP81071AZR2G)
- Tight Β±5 ns delay matching (vs 1EDN7512BXUSA1)
- Wide -40 Β°C to +150 Β°C operating range (vs UCC27611DRVR)
Design Notes
Place a 100 nF X7R ceramic bypass capacitor directly at the VCC pin (pin 1) of the 1EDN7511BXUSA1, with the capacitor ground return via a short, wide trace to the GND pin (pin 6). Per Infineon's datasheet guidance, the gate-drive loop area (VCC - OUT_SRC - gate - GND) should be minimized to below 5 mmΒ² to limit parasitic inductance, which would otherwise cause ringing on the gate waveform and increase switching losses. Use a 2 oz copper pour on inner PCB layers tied to GND to provide a low-impedance return path for the high di/dt gate-charge currents.
For GaN-FET applications, insert a small gate-source resistor in the 2-5 ohm range directly at the gate-source pins of the GaN transistor. The 1EDN7511BXUSA1's 4 A / 8 A drive strength produces sub-10 ns transitions, which when combined with package inductance in the gate loop can cause ringing above the GaN's maximum Vgs rating. Per Infineon application notes for the 1EDN7511B family, this series damping resistor is the recommended mitigation. Keep the gate-drive trace below 10 mm total length.
When designing with the 1EDN7511BXUSA1, do not leave the IN- pin floating if only the non-inverting input is used - tie IN- to VCC per the datasheet, otherwise the output stage may enter an undefined state with both source and sink transistors partially on. For Miller-plateau immunity, add a small (1-10 nF) bootstrap or gate-source capacitor across the driven MOSFET only when the design requires controlled dV/dt; otherwise omit it to preserve switching speed. Always verify UVLO behavior at the minimum expected VCC rail during power-up sequencing.
Compliance Information
RoHS and REACH compliance per Infineon product page. Halogen-free per JEDEC JS709B declaration. AEC-Q100 qualification status not explicitly published - confirm with Infineon for automotive designs requiring Grade-1 or Grade-0 qualification.
