2EDL6014ACG2DXTMA1 vs 2EDN8533RXTMA1 Comparison

Detailed side-by-side comparison of 2EDL6014ACG2DXTMA1 by Infineon and 2EDN8533RXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 2EDL6014ACG2DXTMA1 2EDN8533RXTMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Driver Type Half-Bridge Gate Driver —
Number of Channels 2 (high-side + low-side) 2
Output Configuration Non-Inverting —
High-Side Voltage Rating 120 V —
Source Output Current 4 A —
Sink Output Current 6 A —
Supply Voltage (VDD) 2.97 V to 5.5 V —
Rise Time (typ.) 4.2 ns —
Fall Time (typ.) 3.8 ns —
Operating Temperature -40 C to +125 C —
Package 11-WQFN (2.2 x 2.2 mm) with exposed pad PG-TSSOP-8 (exposed pad)
Packing Method Tape & Reel —
Isolation Type Isolated (level-shifted floating high-side) —
Mounting Type Surface Mount Surface Mount
Technology Family EiceDRIVER 2EDL —
Product Type — Dual-channel low-side gate driver IC
Driver Configuration — Low-side, dual independent channels
Peak Source/Sink Current — 5 A per channel
Input Compatibility — LV-TTL
Input Voltage Tolerance (absolute max) — -12 V to +22 V
Supply Voltage (VCC) — [DATA_NEEDED: VCC operating range]
Output Resistance — Low (per datasheet; see SG figure)
Propagation Delay — Matched between channels (excellent timing accuracy)
Under-Voltage Lockout (UVLO) — Yes (VCC UVLO)
Operating Temperature Range — [DATA_NEEDED: operating temperature]
MSL Level — [DATA_NEEDED: MSL rating]
RoHS Status — Compliant (per Infineon product page)

Datasheets & Resources

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