2EDL6014ACG2DXTMA1 vs 2EDN8533RXTMA1 Perbandingan

Perbandingan bersamaan detil 2EDL6014ACG2DXTMA1 dari Infineon dan 2EDN8533RXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2EDL6014ACG2DXTMA1 2EDN8533RXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Type Half-Bridge Gate Driver —
Number of Channels 2 (high-side + low-side) 2
Konfigurasi Output Non-Inverting —
High-Side Voltage Rating 120 V —
Source Output Current 4 A —
Sink Output Current 6 A —
Supply Voltage (VDD) 2.97 V to 5.5 V —
Rise Time (typ.) 4.2 ns —
Fall Time (typ.) 3.8 ns —
Suhu Kerja -40 C to +125 C —
Paket 11-WQFN (2.2 x 2.2 mm) with exposed pad PG-TSSOP-8 (exposed pad)
Packing Method Tape & Reel —
Isolation Type Isolated (level-shifted floating high-side) —
Tipe Mounting Surface Mount Surface Mount
Technology Family EiceDRIVER 2EDL —
Product Type — Dual-channel low-side gate driver IC
Driver Configuration — Low-side, dual independent channels
Peak Source/Sink Current — 5 A per channel
Input Compatibility — LV-TTL
Input Voltage Tolerance (absolute max) — -12 V to +22 V
Supply Voltage (VCC) — [DATA_NEEDED: VCC operating range]
Output Resistance — Low (per datasheet; see SG figure)
Propagation Delay — Matched between channels (excellent timing accuracy)
Under-Voltage Lockout (UVLO) — Yes (VCC UVLO)
Rentang Suhu Kerja — [DATA_NEEDED: operating temperature]
Level MSL — [DATA_NEEDED: MSL rating]
Status RoHS — Compliant (per Infineon product page)

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