2EDL6014ACG2DXTMA1 vs 2EDN8533RXTMA1 Vergleich

Detaillierter Direktvergleich von 2EDL6014ACG2DXTMA1 von Infineon und 2EDN8533RXTMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 2EDL6014ACG2DXTMA1 2EDN8533RXTMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,18 $0,78
Driver Type Half-Bridge Gate Driver —
Number of Channels 2 (high-side + low-side) 2
Ausgangskonfiguration Non-Inverting —
High-Side Voltage Rating 120 V —
Source Output Current 4 A —
Sink Output Current 6 A —
Supply Voltage (VDD) 2.97 V to 5.5 V —
Rise Time (typ.) 4.2 ns —
Fall Time (typ.) 3.8 ns —
Betriebstemperatur -40 C to +125 C —
Gehäuse 11-WQFN (2.2 x 2.2 mm) with exposed pad PG-TSSOP-8 (exposed pad)
Packing Method Tape & Reel —
Isolation Type Isolated (level-shifted floating high-side) —
Montageart Surface Mount Surface Mount
Technology Family EiceDRIVER 2EDL —
Product Type — Dual-channel low-side gate driver IC
Driver Configuration — Low-side, dual independent channels
Peak Source/Sink Current — 5 A per channel
Input Compatibility — LV-TTL
Input Voltage Tolerance (absolute max) — -12 V to +22 V
Supply Voltage (VCC) — [DATA_NEEDED: VCC operating range]
Output Resistance — Low (per datasheet; see SG figure)
Propagation Delay — Matched between channels (excellent timing accuracy)
Under-Voltage Lockout (UVLO) — Yes (VCC UVLO)
Betriebstemperaturbereich — [DATA_NEEDED: operating temperature]
MSL-Level — [DATA_NEEDED: MSL rating]
RoHS-Status — Compliant (per Infineon product page)

Datenblätter & Ressourcen

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