2N7002L vs 2N7002-7-F Comparison

Detailed side-by-side comparison of 2N7002L by onsemi and 2N7002-7-F by Diodes Incorporated. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 2N7002L 2N7002-7-F
Brand onsemi Diodes Incorporated
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.03 $0.08
Transistor Type N-Channel Enhancement Mode MOSFET N-Channel Enhancement-Mode MOSFET
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) 115 mA (Ta) —
On-State Resistance (RDS(on)) 7.5 ohm max at VGS = 5V —
Gate-Source Voltage (VGS) +/-20 V +/-20 V
Gate Threshold Voltage (VGS(th)) 1 V to 2.5 V [DATA_NEEDED: VGS(th) typical value]
Power Dissipation (PD) 200 mW (Ta), 225 mW max —
Technology High cell density trench MOSFET Trench MOSFET
Mounting Type Surface Mount Surface Mount
Package SOT-23 (SOT-23-3) SOT-23-3 (TO-236)
Configuration Single FET —
Switching Performance Fast switching, rugged and reliable —
Gate Drive 5V logic-level enhancement mode —
Typical Applications Low-side switching, servo motor control, gate driving, logic-level shifting —
Manufacturer onsemi —
RoHS Status [DATA_NEEDED: RoHS status] Compliant
Drain-Source Voltage (VDS max) — 60 V
Continuous Drain Current (ID) at Ta — 115 mA
Continuous Drain Current Range (per Mouser listing) — 105 mA to 210 mA
Power Dissipation (PD) at Ta — 370 mW
On-Resistance RDS(on) — 7.5 ohm to 13.5 ohm
Operating Temperature Range — [DATA_NEEDED: Tj / TA operating range]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge typical]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss typical]
Terminal Finish — Matte tin (solderable per MIL-STD-202, method 208)
Channel Mode — Enhancement

Datasheets & Resources

Browse All Products Create BOM Request Quote