2N7002L vs 2N7002-7-F 比較

詳細な並列比較: 2N7002L メーカー: onsemi および 2N7002-7-F メーカー: Diodes Incorporated。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

Diodes Incorporated
2N7002-7-F 2N7002-7-F - 60V N-Ch Enhancement MOSFET SOT-23 | Diodes Incorporated

2N7002-7-F - 60V N-Ch Enhancement MOSFET SOT-23 | Diodes Incorporated

2N7002-7-F ✓ 生産中

仕様比較

パラメータ 2N7002L 2N7002-7-F
ブランド onsemi Diodes Incorporated
カテゴリ MOSFETs MOSFETs
ライフサイクル状態 有効 有効
在庫状況 In Stock In Stock
単価(USD) $0.03 $0.08
トランジスタタイプ N-Channel Enhancement Mode MOSFET N-Channel Enhancement-Mode MOSFET
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) 115 mA (Ta) —
On-State Resistance (RDS(on)) 7.5 ohm max at VGS = 5V —
Gate-Source Voltage (VGS) +/-20 V +/-20 V
Gate Threshold Voltage (VGS(th)) 1 V to 2.5 V [DATA_NEEDED: VGS(th) typical value]
Power Dissipation (PD) 200 mW (Ta), 225 mW max —
Technology High cell density trench MOSFET Trench MOSFET
実装タイプ Surface Mount Surface Mount
パッケージ SOT-23 (SOT-23-3) SOT-23-3 (TO-236)
Configuration Single FET —
Switching Performance Fast switching, rugged and reliable —
Gate Drive 5V logic-level enhancement mode —
Typical Applications Low-side switching, servo motor control, gate driving, logic-level shifting —
Manufacturer onsemi —
RoHS ステータス [DATA_NEEDED: RoHS status] Compliant
Drain-Source Voltage (VDS max) — 60 V
Continuous Drain Current (ID) at Ta — 115 mA
Continuous Drain Current Range (per Mouser listing) — 105 mA to 210 mA
Power Dissipation (PD) at Ta — 370 mW
On-Resistance RDS(on) — 7.5 ohm to 13.5 ohm
動作温度範囲 — [DATA_NEEDED: Tj / TA operating range]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge typical]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss typical]
Terminal Finish — Matte tin (solderable per MIL-STD-202, method 208)
Channel Mode — Enhancement

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