2N7002L vs BSS123NH6327XTSA1 Comparison

Detailed side-by-side comparison of 2N7002L by onsemi and BSS123NH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSS123NH6327XTSA1 BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 ✓ Active

Specification Comparison

Parameter 2N7002L BSS123NH6327XTSA1
Brand onsemi Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.03 $0.09
Transistor Type N-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) 60 V 100 V
Continuous Drain Current (ID) 115 mA (Ta) 190 mA (Ta)
On-State Resistance (RDS(on)) 7.5 ohm max at VGS = 5V —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) 1 V to 2.5 V [DATA_NEEDED: typical and max VGS(th)]
Power Dissipation (PD) 200 mW (Ta), 225 mW max 500 mW (Ta)
Technology High cell density trench MOSFET —
Mounting Type Surface Mount Surface Mount
Package SOT-23 (SOT-23-3) PG-SOT23 (SOT-23-3)
Configuration Single FET —
Switching Performance Fast switching, rugged and reliable —
Gate Drive 5V logic-level enhancement mode —
Typical Applications Low-side switching, servo motor control, gate driving, logic-level shifting —
Manufacturer onsemi Infineon Technologies
RoHS Status [DATA_NEEDED: RoHS status] —
Part Number — BSS123NH6327XTSA1
Part Status — Active
FET Type — N-Channel, Enhancement Mode
RDS(on) Max — 6 Ω @ VGS = 10 V
Gate-Source Voltage Max (VGS) — ±20 V
Operating Temperature Range — -55 °C to +150 °C (junction)
Qualification — AEC-Q101 (automotive)
RoHS Compliance — Yes (Pb-free lead plating)
MSL Level — 1 (per JEDEC J-STD-020)

Datasheets & Resources

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