2N7002L vs BSS123NH6327XTSA1 Comparación
Comparación detallada lado a lado de 2N7002L por onsemi y BSS123NH6327XTSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | 2N7002L | BSS123NH6327XTSA1 |
|---|---|---|
| Marca | onsemi | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,03 | $0,09 |
| Tipo de transistor | N-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | 100 V |
| Continuous Drain Current (ID) | 115 mA (Ta) | 190 mA (Ta) |
| On-State Resistance (RDS(on)) | 7.5 ohm max at VGS = 5V | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2.5 V | [DATA_NEEDED: typical and max VGS(th)] |
| Power Dissipation (PD) | 200 mW (Ta), 225 mW max | 500 mW (Ta) |
| Technology | High cell density trench MOSFET | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Encapsulado | SOT-23 (SOT-23-3) | PG-SOT23 (SOT-23-3) |
| Configuration | Single FET | — |
| Switching Performance | Fast switching, rugged and reliable | — |
| Gate Drive | 5V logic-level enhancement mode | — |
| Typical Applications | Low-side switching, servo motor control, gate driving, logic-level shifting | — |
| Manufacturer | onsemi | Infineon Technologies |
| Estado RoHS | [DATA_NEEDED: RoHS status] | — |
| Part Number | — | BSS123NH6327XTSA1 |
| Part Status | — | Active |
| FET Type | — | N-Channel, Enhancement Mode |
| RDS(on) Max | — | 6 Ω @ VGS = 10 V |
| Gate-Source Voltage Max (VGS) | — | ±20 V |
| Rango de temperatura de funcionamiento | — | -55 °C to +150 °C (junction) |
| Qualification | — | AEC-Q101 (automotive) |
| RoHS Compliance | — | Yes (Pb-free lead plating) |
| Nivel MSL | — | 1 (per JEDEC J-STD-020) |