2N7002LT1G vs BSS123NH6327XTSA1 Comparison
Detailed side-by-side comparison of 2N7002LT1G by onsemi and BSS123NH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | 2N7002LT1G | BSS123NH6327XTSA1 |
|---|---|---|
| Brand | onsemi | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.02 | $0.09 |
| Polarity | N-Channel | — |
| Channel Mode | Enhancement Mode | — |
| Drain-Source Voltage VDSS | 60 V | — |
| Continuous Drain Current ID | 115 mA (Tc) | — |
| Power Dissipation PD | 225 mW (Ta) | — |
| Maximum RDS(on) | 7.5 ohm @ VGS = 5 V | — |
| Configuration | Single FET | — |
| Package | SOT-23-3 (TO-236) | PG-SOT23 (SOT-23-3) |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 3 | — |
| Category | Small Signal MOSFET | — |
| Technology | MOSFET | — |
| Manufacturer | onsemi (ON Semiconductor) | Infineon Technologies |
| Lead Finish | [DATA_NEEDED: lead finish/plating] | — |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | -55 °C to +150 °C (junction) |
| Packaging | [DATA_NEEDED: packaging type] | — |
| Part Number | — | BSS123NH6327XTSA1 |
| Part Status | — | Active |
| FET Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) | — | 190 mA (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| RDS(on) Max | — | 6 Ω @ VGS = 10 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical and max VGS(th)] |
| Gate-Source Voltage Max (VGS) | — | ±20 V |
| Qualification | — | AEC-Q101 (automotive) |
| RoHS Compliance | — | Yes (Pb-free lead plating) |
| MSL Level | — | 1 (per JEDEC J-STD-020) |