2N7002LT1G vs BSS123NH6327XTSA1 Vergleich
Detaillierter Direktvergleich von 2N7002LT1G von onsemi und BSS123NH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | 2N7002LT1G | BSS123NH6327XTSA1 |
|---|---|---|
| Marke | onsemi | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,02 | $0,09 |
| Polarity | N-Channel | — |
| Channel Mode | Enhancement Mode | — |
| Drain-Source Voltage VDSS | 60 V | — |
| Continuous Drain Current ID | 115 mA (Tc) | — |
| Power Dissipation PD | 225 mW (Ta) | — |
| Maximum RDS(on) | 7.5 ohm @ VGS = 5 V | — |
| Configuration | Single FET | — |
| Gehäuse | SOT-23-3 (TO-236) | PG-SOT23 (SOT-23-3) |
| Montageart | Surface Mount | Surface Mount |
| Anzahl der Pins | 3 | — |
| Kategorie | Small Signal MOSFET | — |
| Technology | MOSFET | — |
| Manufacturer | onsemi (ON Semiconductor) | Infineon Technologies |
| Lead Finish | [DATA_NEEDED: lead finish/plating] | — |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature range] | -55 °C to +150 °C (junction) |
| Packaging | [DATA_NEEDED: packaging type] | — |
| Part Number | — | BSS123NH6327XTSA1 |
| Part Status | — | Active |
| FET Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) | — | 190 mA (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| RDS(on) Max | — | 6 Ω @ VGS = 10 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical and max VGS(th)] |
| Gate-Source Voltage Max (VGS) | — | ±20 V |
| Qualification | — | AEC-Q101 (automotive) |
| RoHS Compliance | — | Yes (Pb-free lead plating) |
| MSL-Level | — | 1 (per JEDEC J-STD-020) |