2N7002LT1G - 60V N-Channel MOSFET SOT-23 | onsemi
MPN: 2N7002LT1G β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.098 | $0.10 |
| 10 | $0.076 | $0.76 |
| 100 | $0.045 | $4.50 |
| 500 | $0.028 | $14.00 |
| 1,000 | $0.016 | $16.00 |
Drop-in alternatives for 2N7002LT1G β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
2N7002K
β Drop-Inπ Reference alternative (not in catalog)
2N7002LT1
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MMBT7002LT1G
β Drop-Inπ Reference alternative (not in catalog)
2N7002-E3
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2N7002L
β Drop-Inβ In Stock
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β Drop-Inβ In Stock
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View Datasheet β2N7002LT1G Maximum Ratings & Electrical Characteristics
| Polarity | N-Channel |
| Operating Mode | Enhancement |
| VDS (Drain-Source Voltage) | 60 V |
| Continuous Drain Current (ID) | 115 mA (Tc) |
| RDS(on) Max @ VGS = 5 V | 7.5 ohm |
| Power Dissipation (PD) | 225 mW (Ta) |
| Configuration | Single FET |
| Mounting Type | Surface Mount |
| Package | SOT-23-3 (TO-236) |
| Number of Pins | 3 |
| RoHS Status | Compliant (lead-free) |
2N7002LT1G Pin Configuration
| Pin 1 | G β Gate - controls channel conduction |
| Pin 2 | D β Drain - current terminal, connected to load low side |
| Pin 3 | S β Source - current terminal, connected to ground in low-side switching |
Safe Operating Area (SOT-23, 25 C ambient, estimated from PD and RDS(on) limits)
Typical Applications
2N7002LT1G is suitable for 6 applications: Low-Side Load Switching, Relay and Solenoid Drivers, LED Driver and Indicator Switching, Battery Protection and Load Switching in Portable Devices, Level Shifting and Logic Pull-Down Networks, Consumer and White-Goods Control Boards.
Low-Side Load Switching
The 2N7002LT1G is the default low-side switch for turning loads on and off from a microcontroller GPIO. Its 60 V VDS covers 5 V, 12 V, and 24 V rails with ample margin, and its enhancement-mode gate fully isolates the load when VGS = 0 V. Driven at 5 V with a 100 ohm series gate resistor, the FET switches resistive loads up to roughly 100 mA while dissipating an Estimated 75 mW at 7.5 ohm RDS(on), well inside the 225 mW package rating. Rise and fall times are dominated by the gate resistor and load capacitance rather than the FET itself, giving clean edges for kHz-class PWM. Place a pull-down on the gate so the load stays off during MCU reset, and keep the drain trace short to limit inductive kick.
Recommended
Relay and Solenoid Drivers
Small signal relays with coil currents of 20 to 70 mA are an ideal match for the 2N7002LT1G. The 60 V drain rating comfortably absorbs the 24 V coil supply plus transient energy that the freewheeling diode does not clamp instantly, and the 115 mA ID rating covers the coil with margin. At a 40 mA coil current the Estimated conduction loss is only 12 mW, so thermal design is trivial. Drive the gate from 3.3 V or 5 V logic through a 100 ohm resistor with a 100 kohm pull-down for defined off-state behavior during power-up. For faster coil release, replace the simple diode clamp with a zener-plus-diode network, since the 60 V VDS tolerates elevated clamp voltages.
Recommended
LED Driver and Indicator Switching
Indicator and status LEDs driven from 3.3 V or 5 V logic are a classic 2N7002LT1G use case. The FET sinks the LED cathode in a low-side configuration; with a 220 ohm series resistor at 5 V, LED current is roughly 10 to 15 mA, drawing under 2 mW of package dissipation at 7.5 ohm RDS(on). The 60 V rating is far above the LED supply, so voltage stress is negligible, and the low gate charge permits direct GPIO drive for PWM dimming at audio-band and higher frequencies. Because the threshold voltage allows full enhancement at 5 V but marginal enhancement at 1.8 V, use 3.3 V or higher gate drive, or select a logic-level gate variant, when the controller runs at 1.8 V.
Recommended
Battery Protection and Load Switching in Portable Devices
Slkor's published application notes for its equivalent 2N7002 explicitly target battery protection, load switching, and power management, and the onsemi 2N7002LT1G fills the same roles. In single-cell Li-ion and alkaline-powered products it acts as a low-side disconnect that isolates the load during over-discharge or fault conditions under control of a protection IC. The 60 V VDS provides robust surge tolerance from hot-plug events, the small SOT-23 footprint fits dense wearable and IoT boards, and leakage is low enough not to drain cells meaningfully in standby. Estimated conduction loss for a 50 mA average system load is under 19 mW at 7.5 ohm, keeping efficiency impact minor for sub-100 mA portable systems.
Recommended
Level Shifting and Logic Pull-Down Networks
Because the gate tolerates a wide drive range and the FET operates from near-zero threshold upward, the 2N7002LT1G is widely used as a pull-down element, a signal gate in bidirectional MOSFET level shifters (the classic two-FET open-drain translator), and an open-drain output stage for status flags. The 60 V rating lets the drain side sit on higher-voltage rails than the driving logic, so a 3.3 V microcontroller can monitor or drive signals on a 24 V industrial bus node through appropriate resistors. Gate charge is low enough for sub-microsecond transitions, and the enhancement-mode structure guarantees the channel is off at VGS = 0 V, an important safety property for fail-safe signaling in industrial I/O modules.
Recommended
Consumer and White-Goods Control Boards
Appliance and consumer-electronics control PCBs use the 2N7002LT1G extensively for switching buzzers, lamps, small motors, valve coils, and communication-enable lines. The 60 V class rating withstands mains-derived transients on 12 V and 24 V secondary rails, and the RoHS/lead-free LT1G construction meets environmental requirements for global appliance markets. Deep multi-source availability (onsemi, Vishay, ST, Slkor all offer pin-compatible 2N7002s) de-risks long-life appliance production, since the footprint never changes even if sourcing shifts between vendors. Estimated dissipation for typical 30 to 80 mA switched loads stays below 50 mW, so a plain SOT-23 pad pattern with standard thermal relief is sufficient without pours or heatsinking.
Recommended
Recommended Products Summary
Engineering reference data for 2N7002LT1G β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 2N7002K | 2N7002-E3 | 2N7002 (ST) | 2N7002 (Slkor) |
|---|---|---|---|---|---|
| Package | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) - same | SOT-23-3 (TO-236) - same | SOT-23-3 (TO-236) - same | SOT-23-3 (TO-236) - same |
| Brand | onsemi | onsemi | Vishay Intertechnology | STMicroelectronics | Slkor |
| VDS (Drain-Source Voltage) | 60 V | 60 V | 60 V | 60 V | 60 V |
| Continuous Drain Current | 115 mA (Tc) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | 0.115 A |
| RDS(on) Max @ VGS = 5 V | 7.5 ohm | approx 2 ohm (improved) | approx 7.5 ohm class | [DATA_NEEDED] | < 7.5 ohm |
| Pinout (SOT-23-3) | Pin1=G, Pin2=D, Pin3=S | Pin1=G, Pin2=D, Pin3=S | Pin1=G, Pin2=D, Pin3=S | Pin1=G, Pin2=D, Pin3=S | Pin1=G, Pin2=D, Pin3=S |
| RoHS / Lead-Free | Compliant (lead-free) | Compliant | [DATA_NEEDED] | [DATA_NEEDED] | Compliant (lead-free) |
| Unit Price (qty 1, as of 2026-09-03) | approx $0.0158-$0.10 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Industry-standard sourcing depth (vs 2N7002 (Slkor))
- Lower conduction loss available in-family (vs 2N7002K)
- 60 V rating with lead-free construction (vs legacy 2N7002 (non-G suffix))
Design Notes
The 2N7002LT1G is not a fully specified logic-level MOSFET: RDS(on) of 7.5 ohm is guaranteed at VGS = 5 V. When driven from 3.3 V logic the channel is only partially enhanced and effective RDS(on) is higher, and at 1.8 V gate drive the device may sit near threshold. For 1.8 V or critical 3.3 V gate drive, choose a true logic-level FET or the 2N7002K. Always add a 10 kohm to 100 kohm gate pull-down so the load cannot float on during MCU reset or connector hot-plug.
Estimated: worst-case conduction loss is P = ID^2 x RDS(on). At the full 115 mA and 7.5 ohm this yields roughly 99 mW, comfortably below the 225 mW (Ta) package rating. However, if the gate is under-driven (see common_pitfalls note), actual RDS(on) can be several times the 7.5 ohm spec, multiplying dissipation. Derate power above 25 C ambient per the onsemi datasheet derating curve, and keep the SOT-23 pads connected to at least modest copper area to aid heat spreading.
Keep the gate drive trace short and route it away from high dV/dt drain nodes to prevent capacitive coupling that can spuriously turn the FET on. For inductive loads (relays, solenoids), place the freewheeling diode physically adjacent to the load, not the FET, so the clamp loop stays tight. The SOT-23-3 footprint is identical across onsemi, Vishay, ST, and Slkor 2N7002 variants, so design the land pattern once and qualify multiple vendors for supply resilience.
Compliance Information
LT1G suffix denotes onsemi lead-free / RoHS-compliant construction per datasheet and distributor listings. REACH, halogen-free and conflict-minerals declarations must be confirmed via onsemi compliance certificates.
