2N7002LT1G - 60V N-Channel MOSFET SOT-23 | onsemi
MPN: 2N7002LT1G ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.12 | $0.12 |
| 10 | $0.09 | $0.90 |
| 100 | $0.05 | $5.00 |
| 500 | $0.03 | $15.00 |
| 1,000 | $0.02 | $20.00 |
2N7002LT1G Overview
A small-signal MOSFET is a field-effect transistor optimized for switching and amplifying low currents rather than handling motor- or power-converter-level loads. Within the power semiconductor hierarchy it sits below power MOSFETs and IGBTs, serving as the workhorse transistor that interfaces microcontroller or logic GPIO outputs to loads such as LEDs, relays, resistive heaters, and switched rails. The 2N7002 family is one of the most widely used small-signal N-channel MOSFETs in the industry, which makes sourcing and cross-referencing straightforward.
Key features of the 2N7002LT1G include its 60 V drain-source breakdown voltage (V(BR)DSS), which provides generous headroom for 12 V and 24 V industrial rails, its enhancement-mode gate structure that switches fully off at VGS = 0 V, and low gate charge that allows direct drive from 3.3 V or 5 V logic with a simple series resistor. The lead-free, RoHS-compliant construction supports modern environmental requirements.
Technologically, the device uses onsemi small-signal MOSFET cell geometry to balance RDS(on), gate charge, and capacitance. The SOT-23 package offers a thermal path adequate for the rated 225 mW at typical ambient conditions, and the tiny 2.9 mm x 1.3 mm footprint supports dense board layouts.
Typical applications include low-side load switching in battery-powered devices, relay and LED drivers, level-shifting and pull-down networks, battery-protection circuits, and general power-management switching in consumer and industrial products.
A key design consideration: at 115 mA with a large source-drain voltage drop, power dissipation (I^2 x RDS(on)) approaches the package limit, so verify thermal margins at worst-case load.
This page synthesizes distributor pricing, drop-in alternatives, cross-references, and practical design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for 2N7002LT1G — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with 2N7002LT1G (same form factor and footprint) — differing in Technology, Package, Manufacturer, Transistor Type, Continuous Drain Current (ID).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
2N7002L
✅ Drop-In✓ In Stock
$0.028 / Unit
View Datasheet →2N7002H6327XTSA2
✅ Drop-In ⚠️ Specs Unverified✓ In Stock
$0.08 / Unit
View Datasheet →BSS123NH6327XTSA1
✅ Drop-In✓ In Stock
$0.085 / Unit
View Datasheet →2N7002-E3
✅ Drop-In📋 Reference alternative (not in catalog)
2N7002L
✅ Drop-In✓ In Stock
$0.028 / Unit
View Datasheet →2N7002L
✅ Drop-In✓ In Stock
$0.028 / Unit
View Datasheet →2N7002LT1G Maximum Ratings & Electrical Characteristics
| Polarity | N-Channel |
| Channel Mode | Enhancement Mode |
| Drain-Source Voltage VDSS | 60 V |
| Continuous Drain Current ID | 115 mA (Tc) |
| Power Dissipation PD | 225 mW (Ta) |
| Maximum RDS(on) | 7.5 ohm @ VGS = 5 V |
| Configuration | Single FET |
| Package | SOT-23-3 (TO-236) |
| Mounting Type | Surface Mount |
| Number of Pins | 3 |
| Category | Small Signal MOSFET |
| Technology | MOSFET |
| Manufacturer | onsemi (ON Semiconductor) |
2N7002LT1G Pin Configuration
| Pin 1 | Gate — Gate terminal; drive with logic level to enhance channel |
| Pin 2 | Source — Source terminal; reference for gate drive (low side = ground) |
| Pin 3 | Drain — Drain terminal; connects to load |
Safe Operating Area (SOT-23, 25 C ambient, estimated from PD and RDS(on) limits)
Typical Applications
2N7002LT1G is suitable for 6 applications: Low-Side Load Switching, Relay and Solenoid Drivers, Battery-Powered Portable Devices, LED Indicators and Lighting Control, Level Shifting and Pull-Down Networks, Power Management in Consumer Electronics.
Low-Side Load Switching
The 2N7002LT1G is a canonical low-side switch: its 60 V VDSS covers 12 V and 24 V industrial rails with margin, while 115 mA continuous current and 7.5 ohm RDS(on) at VGS = 5 V suit LEDs, small relays, resistive heaters, and switched bias rails. The enhancement-mode gate turns fully off at VGS = 0 V, and low gate charge permits direct drive from a 3.3 V or 5 V GPIO through a small series resistor, no gate driver required. Placing the MOSFET between the load and ground keeps gate drive referenced to logic ground and simplifies level translation. Estimated dissipation at full load (0.115 A squared times 7.5 ohm, about 99 mW) stays below the 225 mW SOT-23 package limit, though designers should derate for elevated ambient temperature and reduced VGS drive.
Recommended
Relay and Solenoid Drivers
In relay and small-solenoid drivers, the 2N7002LT1G switches coil currents well within its 115 mA rating for signal relays and reed relays, while the 60 V breakdown voltage absorbs the inductive flyback headroom when paired with a clamp diode. The enhancement-mode structure guarantees the relay stays de-energized during microcontroller reset when the GPIO is high-impedance, provided a gate pull-down resistor (typically 100k) holds VGS at 0 V. Drive the gate from 5 V logic for full enhancement and lowest on-resistance. Estimated coil-side conduction loss of roughly 99 mW at full rated current keeps junction temperature rise small in the SOT-23 package; always place a flyback diode across the coil since the 60 V rating is a limit, not a clamp mechanism.
Recommended
Battery-Powered Portable Devices
Battery chargers, portable instruments, and wearable products use the 2N7002LT1G as a periphery load switch and battery-protect disconnect element. Its near-zero off-state leakage (enhancement-mode, VGS = 0) preserves battery life in standby, and the tiny 2.9 mm x 1.3 mm SOT-23 footprint fits dense portable PCBs. The device serves both as a low-side disconnect for sensors and displays and as a pull-down element in power-up sequencing networks. Because 3.3 V microcontrollers can drive the gate directly, no extra level-shifting components are needed, saving BOM cost. At the portable-typical loads of 10-50 mA, estimated conduction dissipation is only a few milliwatts, so thermal design is trivial and the 225 mW package rating provides wide margin for pulse loads.
Recommended
LED Indicators and Lighting Control
The 2N7002LT1G drives status LEDs and small LED strings directly from logic: at 20 mA per indicator, estimated conduction loss is only about 3 mW (0.02 A squared times 7.5 ohm), leaving enormous margin inside the 115 mA / 225 mW limits even when the gate is driven from 3.3 V where RDS(on) is higher than the 7.5 ohm spec point. The 60 V rating accommodates 24 V industrial indicator rails and series LED strings. PWM dimming works well because the MOSFET's low gate charge switches cleanly at typical GPIO PWM frequencies with a simple series gate resistor, producing crisp on/off edges without shoot-through concerns inherent to half-bridge designs. For multi-LED strings, group several indicators per device or parallel up channels rather than exceeding the 115 mA continuous rating.
Recommended
Level Shifting and Pull-Down Networks
Open-drain bus interfacing and bidirectional level shifting frequently use 2N7002-family MOSFETs, and the 2N7002LT1G is a standard choice. Wired as a common-gate level shifter between two pull-up rails, the 60 V VDSS allows unusual rail combinations, and the device's gate-threshold and capacitance values support common I2C and GPIO speeds. The same device also functions as a gated pull-down: connecting drain to a signal node and gate to a control line clamps the node to ground when asserted, useful for analog gain switching, mute circuits, and power-sequencing discharge paths. Designers should verify the threshold voltage margin against the low-side rail, since at VGS near threshold the channel resistance is high and switching edges slow, which matters for bus rise-time budgets.
Recommended
Power Management in Consumer Electronics
Set-top boxes, small appliances, white goods control boards, and consumer electronics use the 2N7002LT1G as a general-purpose power-management switch: enabling or disabling sub-regulators, gating standby loads, discharging output capacitors at shutdown, and driving bias networks. The 60 V rating covers off-line-derived DC buses after rectification, and the 115 mA rating handles typical bias and standby loads comfortably. Its massive multi-vendor second-source ecosystem - cross-references from Vishay, Infineon, STMicroelectronics, and ROHM all in the same SOT-23 pinout - de-risks supply chains for high-volume consumer products, and the lead-free RoHS-compliant construction satisfies global environmental regulations without qualification work. Estimated standby dissipation is negligible, so no thermal relief is needed in these roles.
Recommended
Recommended Products Summary
Engineering reference data for 2N7002LT1G — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 2N7002L | 2N7002-E3 | BSS123NH6327XTSA1 | 2N7002 (STMicroelectronics) |
|---|---|---|---|---|---|
| Package | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) - same | SOT-23-3 (TO-236) - same | SOT-23-3 (TO-236) - same | SOT-23-3 (TO-236) - same |
| Brand | onsemi | onsemi | Vishay | onsemi | STMicroelectronics |
| Drain-Source Voltage | 60 V | 60 V | 60 V | 100 V | 60 V |
| Continuous Drain Current | 115 mA | 115 mA | 115 mA class | 170 mA | 115 mA class |
| Pinout | Gate / Source / Drain (pins 1/2/3) | Gate / Source / Drain - same | Gate / Source / Drain - same | Gate / Source / Drain - same | Gate / Source / Drain - same |
| Lifecycle Status | Active | Active | Active | Active | Active |
Key Differentiators
- Broadest second-source ecosystem of any small-signal MOSFET (vs BSS123NH6327XTSA1)
- 60 V rating covers 24 V industrial rails with margin (vs BSS138LT1G)
- Trade-off: lower current and voltage than BSS123 in the same footprint (vs BSS123NH6327XTSA1)
Design Notes
Verify conduction loss at the actual gate-drive voltage, not the datasheet spec point. The 7.5 ohm maximum RDS(on) applies at VGS = 5 V; with 3.3 V drive the resistance is higher. Estimated: at the full 115 mA rating with 7.5 ohm, dissipation is about 99 mW against the 225 mW SOT-23 package limit at 25 C ambient - comfortable, but derate for elevated ambient per the datasheet derating curve, and re-check at reduced VGS before using the part at its current limit.
The SOT-23-3 (TO-236) footprint is the industry-standard 2N7002 land pattern (roughly 2.9 mm x 1.3 mm body), which guarantees drop-in compatibility with all cross-brand 2N7002 and BSS138-family equivalents. Add a small series resistor (about 100 ohm) at the gate to damp ringing when driving from long GPIO traces, and include a 100k gate-to-source pull-down so the MOSFET stays off during microcontroller reset or when the GPIO is high-impedance.
Do not switch inductive loads without a flyback clamp: the 60 V VDSS is an absolute maximum, not an avalanche specification to rely on routinely. Do not exceed 115 mA continuous drain current or 225 mW package dissipation; paralleling two SOT-23 devices does not guarantee current sharing because RDS(on) tolerance is wide at low currents. For 60 V-class rails approaching the limit, step up to a 100 V part such as the BSS123 family in the same SOT-23 footprint.
Compliance Information
RoHS-compliant, lead-free construction per onsemi datasheet and product documentation. REACH, halogen-free, and conflict-minerals declarations not stated in provided data - obtain formal certificates from the onsemi product page.
