AFT26HW050GSR3 vs AFT26HW050SR3 Comparison
Detailed side-by-side comparison of AFT26HW050GSR3 by NXP Semiconductors and AFT26HW050SR3 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
NXP Semiconductors
AFT26HW050GSR3 - 9W RF Power LDMOS 2.5-2.7GHz Doherty | NXP
AFT26HW050GSR3 ✓ ActiveSpecification Comparison
| Parameter | AFT26HW050GSR3 | AFT26HW050SR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $51.20 | $47.74 |
| Part Number | AFT26HW050GSR3 | — |
| Manufacturer | NXP Semiconductors | NXP Semiconductors |
| Device Type | RF Power MOSFET (LDMOS), N-Channel, Enhancement Mode | RF Power LDMOS Transistor (Asymmetrical Doherty) |
| Family | Airfast RF Power | — |
| Package / Case | NI-780GS-4L4L (9-pin, ceramic) | NI-780-4S4 (Ceramic Air-Cavity) |
| Mounting Type | Chassis Mount (bolt-down, flange) | Surface Mount (SMD RF Flange) |
| Operating Frequency | 2496 MHz to 2690 MHz | — |
| Typical Drain-Source Voltage (Vds) | 28 V | — |
| Maximum Drain-Source Voltage | 65 V | — |
| Output Power (P1dB / Avg) | 9 W average (Doherty) | — |
| Power Gain (Gp) | 14.2 dB at 2.69 GHz | — |
| Test Condition Gain | 14.2 dB @ 2.69 GHz | — |
| Test Condition Frequency | 2.496 GHz to 2.69 GHz | — |
| Quiescent Current (Iq) | 100 mA | — |
| Configuration | Single transistor, internally input-matched | — |
| Architecture | Asymmetric Doherty (paired carrier/peaking) | — |
| Technology | LDMOS (Laterally Diffused MOS), Airfast gen | — |
| RoHS Status | Compliant | Compliant |
| REACH Status | Compliant | — |
| Operating Temperature | -40 C to +150 C | — |
| Part Family | — | Airfast AFT26HW050S Series |
| Transistor Polarity | — | N-Channel |
| Mode | — | Enhancement Mode |
| Frequency Range | — | 2496 MHz to 2690 MHz |
| Output Power (Average) | — | 9 W (Average) |
| Output Power (Peak) | — | 50 W (Peak) |
| Power Gain (Typical) | — | 14.2 dB |
| Drain Voltage (Operating) | — | 28 V |
| Quiescent Current (Test) | — | 100 mA |
| Topology | — | Asymmetrical Doherty (Main + Peak) |
| Application Band | — | 2.6 GHz TDD-LTE / 5G NR |
| Lead-Free | — | Yes |
| Series | — | Airfast RF Power |