AFT26HW050GSR3 vs AFT26HW050SR3 Comparação
Comparação detalhada lado a lado de AFT26HW050GSR3 por NXP Semiconductors e AFT26HW050SR3 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
NXP Semiconductors
AFT26HW050GSR3 - 9W RF Power LDMOS 2.5-2.7GHz Doherty | NXP
AFT26HW050GSR3 ✓ AtivoComparação de especificações
| Parâmetro | AFT26HW050GSR3 | AFT26HW050SR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $51,20 | $47,74 |
| Part Number | AFT26HW050GSR3 | — |
| Manufacturer | NXP Semiconductors | NXP Semiconductors |
| Device Type | RF Power MOSFET (LDMOS), N-Channel, Enhancement Mode | RF Power LDMOS Transistor (Asymmetrical Doherty) |
| Family | Airfast RF Power | — |
| Encapsulamento / Caixa | NI-780GS-4L4L (9-pin, ceramic) | NI-780-4S4 (Ceramic Air-Cavity) |
| Tipo de montagem | Chassis Mount (bolt-down, flange) | Surface Mount (SMD RF Flange) |
| Operating Frequency | 2496 MHz to 2690 MHz | — |
| Typical Drain-Source Voltage (Vds) | 28 V | — |
| Maximum Drain-Source Voltage | 65 V | — |
| Output Power (P1dB / Avg) | 9 W average (Doherty) | — |
| Power Gain (Gp) | 14.2 dB at 2.69 GHz | — |
| Test Condition Gain | 14.2 dB @ 2.69 GHz | — |
| Test Condition Frequency | 2.496 GHz to 2.69 GHz | — |
| Quiescent Current (Iq) | 100 mA | — |
| Configuration | Single transistor, internally input-matched | — |
| Architecture | Asymmetric Doherty (paired carrier/peaking) | — |
| Technology | LDMOS (Laterally Diffused MOS), Airfast gen | — |
| Status RoHS | Compliant | Compliant |
| REACH Status | Compliant | — |
| Temperatura de operação | -40 C to +150 C | — |
| Part Family | — | Airfast AFT26HW050S Series |
| Transistor Polarity | — | N-Channel |
| Mode | — | Enhancement Mode |
| Frequency Range | — | 2496 MHz to 2690 MHz |
| Output Power (Average) | — | 9 W (Average) |
| Output Power (Peak) | — | 50 W (Peak) |
| Power Gain (Typical) | — | 14.2 dB |
| Drain Voltage (Operating) | — | 28 V |
| Quiescent Current (Test) | — | 100 mA |
| Topologia | — | Asymmetrical Doherty (Main + Peak) |
| Application Band | — | 2.6 GHz TDD-LTE / 5G NR |
| Lead-Free | — | Yes |
| Series | — | Airfast RF Power |