AFT26HW050GSR3 vs AFT26HW050SR3 Vergleich
Detaillierter Direktvergleich von AFT26HW050GSR3 von NXP Semiconductors und AFT26HW050SR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
AFT26HW050GSR3 - 9W RF Power LDMOS 2.5-2.7GHz Doherty | NXP
AFT26HW050GSR3 ✓ AktivSpezifikationsvergleich
| Parameter | AFT26HW050GSR3 | AFT26HW050SR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $51,20 | $47,74 |
| Part Number | AFT26HW050GSR3 | — |
| Manufacturer | NXP Semiconductors | NXP Semiconductors |
| Device Type | RF Power MOSFET (LDMOS), N-Channel, Enhancement Mode | RF Power LDMOS Transistor (Asymmetrical Doherty) |
| Family | Airfast RF Power | — |
| Gehäuse / Bauform | NI-780GS-4L4L (9-pin, ceramic) | NI-780-4S4 (Ceramic Air-Cavity) |
| Montageart | Chassis Mount (bolt-down, flange) | Surface Mount (SMD RF Flange) |
| Operating Frequency | 2496 MHz to 2690 MHz | — |
| Typical Drain-Source Voltage (Vds) | 28 V | — |
| Maximum Drain-Source Voltage | 65 V | — |
| Output Power (P1dB / Avg) | 9 W average (Doherty) | — |
| Power Gain (Gp) | 14.2 dB at 2.69 GHz | — |
| Test Condition Gain | 14.2 dB @ 2.69 GHz | — |
| Test Condition Frequency | 2.496 GHz to 2.69 GHz | — |
| Quiescent Current (Iq) | 100 mA | — |
| Configuration | Single transistor, internally input-matched | — |
| Architecture | Asymmetric Doherty (paired carrier/peaking) | — |
| Technology | LDMOS (Laterally Diffused MOS), Airfast gen | — |
| RoHS-Status | Compliant | Compliant |
| REACH Status | Compliant | — |
| Betriebstemperatur | -40 C to +150 C | — |
| Part Family | — | Airfast AFT26HW050S Series |
| Transistor Polarity | — | N-Channel |
| Mode | — | Enhancement Mode |
| Frequency Range | — | 2496 MHz to 2690 MHz |
| Output Power (Average) | — | 9 W (Average) |
| Output Power (Peak) | — | 50 W (Peak) |
| Power Gain (Typical) | — | 14.2 dB |
| Drain Voltage (Operating) | — | 28 V |
| Quiescent Current (Test) | — | 100 mA |
| Topologie | — | Asymmetrical Doherty (Main + Peak) |
| Application Band | — | 2.6 GHz TDD-LTE / 5G NR |
| Lead-Free | — | Yes |
| Series | — | Airfast RF Power |