AFT26HW050SR3 vs AFT26H050W26SR3 Comparison
Detailed side-by-side comparison of AFT26HW050SR3 by NXP Semiconductors and AFT26H050W26SR3 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
NXP Semiconductors
AFT26H050W26SR3 - 9W RF LDMOS Transistor 2.5-2.7 GHz | NXP
AFT26H050W26SR3 ObsoleteSpecification Comparison
| Parameter | AFT26HW050SR3 | AFT26H050W26SR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Obsolete |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $47.74 | $23.95 |
| Manufacturer | NXP Semiconductors | NXP Semiconductors (formerly Freescale) |
| Part Family | Airfast AFT26HW050S Series | — |
| Device Type | RF Power LDMOS Transistor (Asymmetrical Doherty) | — |
| Transistor Polarity | N-Channel | — |
| Mode | Enhancement Mode | — |
| Frequency Range | 2496 MHz to 2690 MHz | 2.496 GHz to 2.69 GHz |
| Output Power (Average) | 9 W (Average) | — |
| Output Power (Peak) | 50 W (Peak) | — |
| Power Gain (Typical) | 14.2 dB | — |
| Drain Voltage (Operating) | 28 V | — |
| Quiescent Current (Test) | 100 mA | — |
| Package / Case | NI-780-4S4 (Ceramic Air-Cavity) | — |
| Topology | Asymmetrical Doherty (Main + Peak) | — |
| Application Band | 2.6 GHz TDD-LTE / 5G NR | — |
| RoHS Status | Compliant | — |
| Lead-Free | Yes | — |
| Mounting Type | Surface Mount (SMD RF Flange) | Surface Mount / chassis-mount screw flange |
| Series | Airfast RF Power | — |
| Transistor Type | — | N-Channel LDMOS, Enhancement Mode |
| Average Output Power | — | 9 W |
| Test Voltage | — | 28 V |
| Test Current | — | 100 mA |
| Power Gain | — | 14.2 dB |
| Maximum Drain-Source Voltage | — | 65 V |
| Maximum Operating Temperature | — | 150 °C |
| Peak Reflow Temperature | — | 260 °C |
| Configuration | — | Single, Asymmetrical Doherty |
| Number of Elements | — | 1 |
| Technology | — | Metal-Oxide Semiconductor (LDMOS) |
| Package | — | NI-780S-4L4L-8 (ceramic, overmolded) |
| Channel Type | — | N-Channel |
| Supplier Device Package | — | NI-780S-4L4L-8 |