AFT26HW050SR3 vs AFT26H050W26SR3 Comparación
Comparación detallada lado a lado de AFT26HW050SR3 por NXP Semiconductors y AFT26H050W26SR3 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
AFT26H050W26SR3 - 9W RF LDMOS Transistor 2.5-2.7 GHz | NXP
AFT26H050W26SR3 ObsoleteComparación de especificaciones
| Parámetro | AFT26HW050SR3 | AFT26H050W26SR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Obsolete |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $47,74 | $23,95 |
| Manufacturer | NXP Semiconductors | NXP Semiconductors (formerly Freescale) |
| Part Family | Airfast AFT26HW050S Series | — |
| Device Type | RF Power LDMOS Transistor (Asymmetrical Doherty) | — |
| Transistor Polarity | N-Channel | — |
| Mode | Enhancement Mode | — |
| Frequency Range | 2496 MHz to 2690 MHz | 2.496 GHz to 2.69 GHz |
| Output Power (Average) | 9 W (Average) | — |
| Output Power (Peak) | 50 W (Peak) | — |
| Power Gain (Typical) | 14.2 dB | — |
| Drain Voltage (Operating) | 28 V | — |
| Quiescent Current (Test) | 100 mA | — |
| Encapsulado / Carcasa | NI-780-4S4 (Ceramic Air-Cavity) | — |
| Topología | Asymmetrical Doherty (Main + Peak) | — |
| Application Band | 2.6 GHz TDD-LTE / 5G NR | — |
| Estado RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Tipo de montaje | Surface Mount (SMD RF Flange) | Surface Mount / chassis-mount screw flange |
| Series | Airfast RF Power | — |
| Tipo de transistor | — | N-Channel LDMOS, Enhancement Mode |
| Average Output Power | — | 9 W |
| Test Voltage | — | 28 V |
| Test Current | — | 100 mA |
| Power Gain | — | 14.2 dB |
| Maximum Drain-Source Voltage | — | 65 V |
| Maximum Operating Temperature | — | 150 °C |
| Peak Reflow Temperature | — | 260 °C |
| Configuration | — | Single, Asymmetrical Doherty |
| Number of Elements | — | 1 |
| Technology | — | Metal-Oxide Semiconductor (LDMOS) |
| Encapsulado | — | NI-780S-4L4L-8 (ceramic, overmolded) |
| Channel Type | — | N-Channel |
| Supplier Device Package | — | NI-780S-4L4L-8 |