AFT26HW050SR3 vs AFT26H050W26SR3 Vergleich
Detaillierter Direktvergleich von AFT26HW050SR3 von NXP Semiconductors und AFT26H050W26SR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
AFT26H050W26SR3 - 9W RF LDMOS Transistor 2.5-2.7 GHz | NXP
AFT26H050W26SR3 ObsoleteSpezifikationsvergleich
| Parameter | AFT26HW050SR3 | AFT26H050W26SR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Obsolete |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $47,74 | $23,95 |
| Manufacturer | NXP Semiconductors | NXP Semiconductors (formerly Freescale) |
| Part Family | Airfast AFT26HW050S Series | — |
| Device Type | RF Power LDMOS Transistor (Asymmetrical Doherty) | — |
| Transistor Polarity | N-Channel | — |
| Mode | Enhancement Mode | — |
| Frequency Range | 2496 MHz to 2690 MHz | 2.496 GHz to 2.69 GHz |
| Output Power (Average) | 9 W (Average) | — |
| Output Power (Peak) | 50 W (Peak) | — |
| Power Gain (Typical) | 14.2 dB | — |
| Drain Voltage (Operating) | 28 V | — |
| Quiescent Current (Test) | 100 mA | — |
| Gehäuse / Bauform | NI-780-4S4 (Ceramic Air-Cavity) | — |
| Topologie | Asymmetrical Doherty (Main + Peak) | — |
| Application Band | 2.6 GHz TDD-LTE / 5G NR | — |
| RoHS-Status | Compliant | — |
| Lead-Free | Yes | — |
| Montageart | Surface Mount (SMD RF Flange) | Surface Mount / chassis-mount screw flange |
| Series | Airfast RF Power | — |
| Transistortyp | — | N-Channel LDMOS, Enhancement Mode |
| Average Output Power | — | 9 W |
| Test Voltage | — | 28 V |
| Test Current | — | 100 mA |
| Power Gain | — | 14.2 dB |
| Maximum Drain-Source Voltage | — | 65 V |
| Maximum Operating Temperature | — | 150 °C |
| Peak Reflow Temperature | — | 260 °C |
| Configuration | — | Single, Asymmetrical Doherty |
| Number of Elements | — | 1 |
| Technology | — | Metal-Oxide Semiconductor (LDMOS) |
| Gehäuse | — | NI-780S-4L4L-8 (ceramic, overmolded) |
| Channel Type | — | N-Channel |
| Supplier Device Package | — | NI-780S-4L4L-8 |