AS4C512M16D4A-62BIN vs AS4C512M16D4-75BCNTR Comparison

Detailed side-by-side comparison of AS4C512M16D4A-62BIN by Alliance Memory and AS4C512M16D4-75BCNTR by Alliance Memory. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Alliance Memory
AS4C512M16D4A-62BIN AS4C512M16D4A-62BIN - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory

AS4C512M16D4A-62BIN - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory

AS4C512M16D4A-62BIN ✓ Active
Alliance Memory
AS4C512M16D4-75BCNTR AS4C512M16D4-75BCNTR - 8Gb DDR4 SDRAM 2666Mbps | Alliance Memory

AS4C512M16D4-75BCNTR - 8Gb DDR4 SDRAM 2666Mbps | Alliance Memory

AS4C512M16D4-75BCNTR ✓ Active

Specification Comparison

Parameter AS4C512M16D4A-62BIN AS4C512M16D4-75BCNTR
Brand Alliance Memory Alliance Memory
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $8.10 $7.90
Memory Type DDR4 SDRAM DDR4 SDRAM
Memory Size 8 Gbit —
Organization 512M x 16 512M x 16
Clock Rate 1600 MHz —
Data Rate 3200 Mbps per pin 2666 Mbps per pin
Supply Voltage 1.14V ~ 1.26V (nominal 1.2V) —
Operating Temperature -40°C to +95°C —
Package 96-FBGA (7.5x13mm) 96-ball FBGA (7.5 x 13 mm)
Interface POD (Pseudo Open Drain) Parallel
CAS Latency Programmable (e.g., 22 cycles) —
Burst Length 8 (with burst chop 4) —
Refresh Auto-refresh and self-refresh —
RoHS Compliant —
Mounting Type Surface Mount Surface Mount
Lead Free Yes —
Density — 8 Gbit
Clock Frequency — 1.333 GHz
Access Time — 18 ns
Write Cycle Time — 15 ns
Supply Voltage (VDD) — 1.2 V (range 1.14 V to 1.26 V)
Prefetch Architecture — 8n
Internal Bank Count — 16 banks
Operating Temperature Range — 0C to +95C (case, commercial)
Process Technology — 20nm-class DRAM
Termination — On-die termination (ODT)
Refresh Modes — Auto-refresh and self-refresh
Packaging Option — Tape & Reel (TR suffix)
RoHS Status — Compliant
Lead-Free — Yes

Datasheets & Resources

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