AS4C512M16D4B-62BCNTR vs MT40A512M16TB-062E:R Comparison

Detailed side-by-side comparison of AS4C512M16D4B-62BCNTR by Alliance Memory and MT40A512M16TB-062E:R by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Alliance Memory
AS4C512M16D4B-62BCNTR

AS4C512M16D4B-62BCNTR - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory

AS4C512M16D4B-62BCNTR βœ“ Active
Micron Technology
MT40A512M16TB-062E:R

MT40A512M16TB-062E:R - 8Gb DDR4 SDRAM 3200MT/s | Micron

MT40A512M16TB-062E:R βœ“ Active

Specification Comparison

Parameter AS4C512M16D4B-62BCNTR MT40A512M16TB-062E:R
Brand Alliance Memory Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $8.10 $60.00
Memory Type DDR4 SDRAM DDR4 SDRAM
Memory Size 8 Gbit (512M x 16) 8 Gbit (512M x 16)
Data Rate 3200 MT/s 3200 MT/s
Clock Frequency 1600 MHz 1600 MHz
CAS Latency 19 ns 22
Supply Voltage 1.2 V (1.14V to 1.26V) β€”
Interface Parallel Parallel
Package 96-FBGA (7.5x13 mm) 96-FBGA (7.5x13 mm)
Operating Temperature 0Β°C to 95Β°C 0Β°C to +95Β°C
Mounting Type Surface Mount β€”
JEDEC Standard Compliant β€”
Organization 512M x 16 β€”
Revision Rev.B β€”
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Supply Voltage (VDD/VDDQ) β€” 1.2V Β±60mV
VPP Voltage β€” 2.5V (-125mV, +250mV)
Data Bus Width β€” 16 bits
Refresh Time β€” 8192 cycles (64ms at -40Β°C to 85Β°C, 32ms at >85Β°C to 95Β°C, 16ms at >95Β°C)
I/O Type β€” 1.2V pseudo open-drain
Features β€” Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration

Datasheets & Resources

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