BAT41-TAP vs BAT43 Comparison
Detailed side-by-side comparison of BAT41-TAP by Vishay Intertechnology and BAT43 by STMicroelectronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Vishay Intertechnology
BAT41-TAP
BAT41-TAP - 100V 100mA Small Signal Schottky Diode | Vishay
BAT41-TAP β ActiveSTMicroelectronics
BAT43
BAT43 - 30V 200mA Schottky Diode DO-35 | STMicroelectronics
BAT43 β ActiveSpecification Comparison
| Parameter | BAT41-TAP | BAT43 |
|---|---|---|
| Brand | Vishay Intertechnology | STMicroelectronics |
| Category | Diodes | Diodes |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.03 | $0.08 |
| Diode Type | Small Signal Schottky Barrier | β |
| Reverse Voltage (VR) | 100 V | β |
| Average Forward Current | 100 mA | β |
| Non-Repetitive Peak Forward Current (IFSM) | 750 mA | β |
| Package | DO-204AH (DO-35) axial through-hole | DO-35 (glass axial, through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Turn-On Voltage | Low (Schottky barrier) | β |
| Switching Speed | Extremely fast, low forward and reverse recovery times | β |
| ESD Protection | PN junction guard ring | Integrated guard ring against excessive voltage |
| Intended Use | General purpose, switching mode with low IR losses | β |
| Automotive Qualification | AEC-Q101 qualified version available (part number on request) | β |
| Configuration | Single diode | Single diode |
| Forward Voltage (VF) | [DATA_NEEDED: Forward Voltage (VF)] | β |
| Reverse Leakage Current (IR) | [DATA_NEEDED: Reverse Leakage Current (IR)] | β |
| Junction Capacitance (CJ) | [DATA_NEEDED: Junction Capacitance (CJ)] | β |
| Operating Temperature Range | [DATA_NEEDED: Operating Temperature Range] | β |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS status] |
| Device Type | β | Small Signal Schottky Diode |
| Repetitive Peak Reverse Voltage (VRRM) | β | 30 V |
| Forward Continuous Current (IF) | β | 200 mA at Ta = 25 C |
| Repetitive Peak Forward Current (IFRM) | β | 500 mA (tp <= 1 s, delta <= 0.5) |
| Non-Repetitive Surge Current (IFSM) | β | 4 A (tp = 10 ms) |
| Power Dissipation (Ptot) | β | 200 mW at Tl = 65 C |
| Technology | β | Metal-to-silicon Schottky barrier |
| Forward Voltage | β | [DATA_NEEDED: forward voltage at rated current] |
| Reverse Leakage Current | β | [DATA_NEEDED: reverse leakage current] |
| Case Style | β | Hermetically sealed glass body |
| Operating Temperature | β | [DATA_NEEDED: operating temperature range] |