BAT41-TAP vs BAT43 Comparación
Comparación detallada lado a lado de BAT41-TAP por Vishay Intertechnology y BAT43 por STMicroelectronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Vishay Intertechnology
BAT41-TAP - 100V 100mA Small Signal Schottky Diode | Vishay
BAT41-TAP ✓ ActivoComparación de especificaciones
| Parámetro | BAT41-TAP | BAT43 |
|---|---|---|
| Marca | Vishay Intertechnology | STMicroelectronics |
| Categoría | Diodes | Diodes |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,03 | $0,08 |
| Diode Type | Small Signal Schottky Barrier | — |
| Reverse Voltage (VR) | 100 V | — |
| Average Forward Current | 100 mA | — |
| Non-Repetitive Peak Forward Current (IFSM) | 750 mA | — |
| Encapsulado | DO-204AH (DO-35) axial through-hole | DO-35 (glass axial, through-hole) |
| Tipo de montaje | Through Hole | Through Hole |
| Turn-On Voltage | Low (Schottky barrier) | — |
| Switching Speed | Extremely fast, low forward and reverse recovery times | — |
| ESD Protection | PN junction guard ring | Integrated guard ring against excessive voltage |
| Intended Use | General purpose, switching mode with low IR losses | — |
| Automotive Qualification | AEC-Q101 qualified version available (part number on request) | — |
| Configuration | Single diode | Single diode |
| Forward Voltage (VF) | [DATA_NEEDED: Forward Voltage (VF)] | — |
| Reverse Leakage Current (IR) | [DATA_NEEDED: Reverse Leakage Current (IR)] | — |
| Junction Capacitance (CJ) | [DATA_NEEDED: Junction Capacitance (CJ)] | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: Operating Temperature Range] | — |
| Estado RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Device Type | — | Small Signal Schottky Diode |
| Repetitive Peak Reverse Voltage (VRRM) | — | 30 V |
| Forward Continuous Current (IF) | — | 200 mA at Ta = 25 C |
| Repetitive Peak Forward Current (IFRM) | — | 500 mA (tp <= 1 s, delta <= 0.5) |
| Non-Repetitive Surge Current (IFSM) | — | 4 A (tp = 10 ms) |
| Disipación de potencia (Ptot) | — | 200 mW at Tl = 65 C |
| Technology | — | Metal-to-silicon Schottky barrier |
| Forward Voltage | — | [DATA_NEEDED: forward voltage at rated current] |
| Reverse Leakage Current | — | [DATA_NEEDED: reverse leakage current] |
| Case Style | — | Hermetically sealed glass body |
| Temperatura de funcionamiento | — | [DATA_NEEDED: operating temperature range] |