BAT41-TAP vs BAT43 Vergleich
Detaillierter Direktvergleich von BAT41-TAP von Vishay Intertechnology und BAT43 von STMicroelectronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Vishay Intertechnology
BAT41-TAP - 100V 100mA Small Signal Schottky Diode | Vishay
BAT41-TAP ✓ AktivSpezifikationsvergleich
| Parameter | BAT41-TAP | BAT43 |
|---|---|---|
| Marke | Vishay Intertechnology | STMicroelectronics |
| Kategorie | Diodes | Diodes |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,03 | $0,08 |
| Diode Type | Small Signal Schottky Barrier | — |
| Reverse Voltage (VR) | 100 V | — |
| Average Forward Current | 100 mA | — |
| Non-Repetitive Peak Forward Current (IFSM) | 750 mA | — |
| Gehäuse | DO-204AH (DO-35) axial through-hole | DO-35 (glass axial, through-hole) |
| Montageart | Through Hole | Through Hole |
| Turn-On Voltage | Low (Schottky barrier) | — |
| Switching Speed | Extremely fast, low forward and reverse recovery times | — |
| ESD Protection | PN junction guard ring | Integrated guard ring against excessive voltage |
| Intended Use | General purpose, switching mode with low IR losses | — |
| Automotive Qualification | AEC-Q101 qualified version available (part number on request) | — |
| Configuration | Single diode | Single diode |
| Forward Voltage (VF) | [DATA_NEEDED: Forward Voltage (VF)] | — |
| Reverse Leakage Current (IR) | [DATA_NEEDED: Reverse Leakage Current (IR)] | — |
| Junction Capacitance (CJ) | [DATA_NEEDED: Junction Capacitance (CJ)] | — |
| Betriebstemperaturbereich | [DATA_NEEDED: Operating Temperature Range] | — |
| RoHS-Status | Compliant | [DATA_NEEDED: RoHS status] |
| Device Type | — | Small Signal Schottky Diode |
| Repetitive Peak Reverse Voltage (VRRM) | — | 30 V |
| Forward Continuous Current (IF) | — | 200 mA at Ta = 25 C |
| Repetitive Peak Forward Current (IFRM) | — | 500 mA (tp <= 1 s, delta <= 0.5) |
| Non-Repetitive Surge Current (IFSM) | — | 4 A (tp = 10 ms) |
| Verlustleistung (Ptot) | — | 200 mW at Tl = 65 C |
| Technology | — | Metal-to-silicon Schottky barrier |
| Forward Voltage | — | [DATA_NEEDED: forward voltage at rated current] |
| Reverse Leakage Current | — | [DATA_NEEDED: reverse leakage current] |
| Case Style | — | Hermetically sealed glass body |
| Betriebstemperatur | — | [DATA_NEEDED: operating temperature range] |