BAT41 vs BAT43-R0 Comparison
Detailed side-by-side comparison of BAT41 by STMicroelectronics and BAT43-R0 by Taiwan Semiconductor. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
STMicroelectronics
BAT41
BAT41 - 100V 100mA Schottky Diode DO-35 | STMicroelectronics
BAT41 β ActiveTaiwan Semiconductor
BAT43-R0
BAT43-R0 - 30V 200mA Schottky Diode DO-35 | Taiwan Semiconductor
BAT43-R0 β ActiveSpecification Comparison
| Parameter | BAT41 | BAT43-R0 |
|---|---|---|
| Brand | STMicroelectronics | Taiwan Semiconductor |
| Category | Diodes | Diodes |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.03 | $0.02 |
| Device Type | Small Signal Schottky Barrier Diode | β |
| Repetitive Peak Reverse Voltage (VRRM) | 100 V | 30 V |
| Average Forward Current (IF(AV)) | 100 mA | 200 mA |
| Package | DO-35 (Glass), axial through-hole | DO-35 axial glass (through hole) |
| Technology | Metal-to-silicon Schottky with PN guard ring | β |
| Forward Voltage | [DATA_NEEDED: forward voltage at rated test current] | β |
| Reverse Leakage Current (IR) | [DATA_NEEDED: reverse leakage at rated VR] | β |
| Junction Capacitance | [DATA_NEEDED: junction capacitance value] | β |
| Reverse Recovery Time | Very low (fast switching, per ST datasheet) | β |
| Turn-On Voltage | Very low (low turn-on, per ST datasheet) | β |
| ESD Protection | Integrated guard-ring protection against excessive voltage such as ESD | Fast guard ring against excessive voltage (ESD) |
| Operating Temperature Range | [DATA_NEEDED: operating junction temperature range] | β |
| Mounting Type | Through Hole | Through Hole |
| Configuration | Single diode | Single diode |
| Series Package Options | SOD-123 or SOD-523 (series variants); BAT41 base part in DO-35 | β |
| RoHS Status | [DATA_NEEDED: RoHS compliance statement] | Compliant |
| Diode Type | β | Small Signal Schottky Barrier |
| Maximum Forward Voltage (VF) | β | 1 V |
| Non-Repetitive Peak Forward Surge Current (IFSM) | β | 4 A |
| Power Dissipation | β | 200 mW |
| Junction Operating Temperature | β | -65C to +125C |
| Reverse Recovery | β | Fast switching (Schottky, majority carrier) |
| Forward Voltage Turn-On | β | Very low turn-on voltage |
| Capacitance (Cj) | β | [DATA_NEEDED: junction capacitance] |
| Leakage Current (IR) | β | [DATA_NEEDED: reverse leakage current] |
| Packaging Type | β | [DATA_NEEDED: tape/reel or bulk option] |