BAT41 vs BAT43-R0 Comparación
Comparación detallada lado a lado de BAT41 por STMicroelectronics y BAT43-R0 por Taiwan Semiconductor. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Taiwan Semiconductor
BAT43-R0 - 30V 200mA Schottky Diode DO-35 | Taiwan Semiconductor
BAT43-R0 ✓ ActivoComparación de especificaciones
| Parámetro | BAT41 | BAT43-R0 |
|---|---|---|
| Marca | STMicroelectronics | Taiwan Semiconductor |
| Categoría | Diodes | Diodes |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,03 | $0,02 |
| Device Type | Small Signal Schottky Barrier Diode | — |
| Repetitive Peak Reverse Voltage (VRRM) | 100 V | 30 V |
| Average Forward Current (IF(AV)) | 100 mA | 200 mA |
| Encapsulado | DO-35 (Glass), axial through-hole | DO-35 axial glass (through hole) |
| Technology | Metal-to-silicon Schottky with PN guard ring | — |
| Forward Voltage | [DATA_NEEDED: forward voltage at rated test current] | — |
| Reverse Leakage Current (IR) | [DATA_NEEDED: reverse leakage at rated VR] | — |
| Junction Capacitance | [DATA_NEEDED: junction capacitance value] | — |
| Reverse Recovery Time | Very low (fast switching, per ST datasheet) | — |
| Turn-On Voltage | Very low (low turn-on, per ST datasheet) | — |
| ESD Protection | Integrated guard-ring protection against excessive voltage such as ESD | Fast guard ring against excessive voltage (ESD) |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating junction temperature range] | — |
| Tipo de montaje | Through Hole | Through Hole |
| Configuration | Single diode | Single diode |
| Series Package Options | SOD-123 or SOD-523 (series variants); BAT41 base part in DO-35 | — |
| Estado RoHS | [DATA_NEEDED: RoHS compliance statement] | Compliant |
| Diode Type | — | Small Signal Schottky Barrier |
| Maximum Forward Voltage (VF) | — | 1 V |
| Non-Repetitive Peak Forward Surge Current (IFSM) | — | 4 A |
| Power Dissipation | — | 200 mW |
| Junction Operating Temperature | — | -65C to +125C |
| Reverse Recovery | — | Fast switching (Schottky, majority carrier) |
| Forward Voltage Turn-On | — | Very low turn-on voltage |
| Capacitance (Cj) | — | [DATA_NEEDED: junction capacitance] |
| Leakage Current (IR) | — | [DATA_NEEDED: reverse leakage current] |
| Packaging Type | — | [DATA_NEEDED: tape/reel or bulk option] |