BAT41 vs BAT43-R0 Comparaison
Comparaison détaillée côte à côte de BAT41 par STMicroelectronics et BAT43-R0 par Taiwan Semiconductor. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Taiwan Semiconductor
BAT43-R0 - 30V 200mA Schottky Diode DO-35 | Taiwan Semiconductor
BAT43-R0 ✓ ActifComparaison des spécifications
| Paramètre | BAT41 | BAT43-R0 |
|---|---|---|
| Marque | STMicroelectronics | Taiwan Semiconductor |
| Catégorie | Diodes | Diodes |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,03 | $0,02 |
| Device Type | Small Signal Schottky Barrier Diode | — |
| Repetitive Peak Reverse Voltage (VRRM) | 100 V | 30 V |
| Average Forward Current (IF(AV)) | 100 mA | 200 mA |
| Boîtier | DO-35 (Glass), axial through-hole | DO-35 axial glass (through hole) |
| Technology | Metal-to-silicon Schottky with PN guard ring | — |
| Forward Voltage | [DATA_NEEDED: forward voltage at rated test current] | — |
| Reverse Leakage Current (IR) | [DATA_NEEDED: reverse leakage at rated VR] | — |
| Junction Capacitance | [DATA_NEEDED: junction capacitance value] | — |
| Reverse Recovery Time | Very low (fast switching, per ST datasheet) | — |
| Turn-On Voltage | Very low (low turn-on, per ST datasheet) | — |
| ESD Protection | Integrated guard-ring protection against excessive voltage such as ESD | Fast guard ring against excessive voltage (ESD) |
| Plage de température de fonctionnement | [DATA_NEEDED: operating junction temperature range] | — |
| Type de montage | Through Hole | Through Hole |
| Configuration | Single diode | Single diode |
| Series Package Options | SOD-123 or SOD-523 (series variants); BAT41 base part in DO-35 | — |
| Statut RoHS | [DATA_NEEDED: RoHS compliance statement] | Compliant |
| Diode Type | — | Small Signal Schottky Barrier |
| Maximum Forward Voltage (VF) | — | 1 V |
| Non-Repetitive Peak Forward Surge Current (IFSM) | — | 4 A |
| Power Dissipation | — | 200 mW |
| Junction Operating Temperature | — | -65C to +125C |
| Reverse Recovery | — | Fast switching (Schottky, majority carrier) |
| Forward Voltage Turn-On | — | Very low turn-on voltage |
| Capacitance (Cj) | — | [DATA_NEEDED: junction capacitance] |
| Leakage Current (IR) | — | [DATA_NEEDED: reverse leakage current] |
| Packaging Type | — | [DATA_NEEDED: tape/reel or bulk option] |