BSC011N03LSIATMA1 vs BSC059N04LS6ATMA1 Comparison

Detailed side-by-side comparison of BSC011N03LSIATMA1 by Infineon and BSC059N04LS6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC059N04LS6ATMA1 BSC059N04LS6ATMA1 - 40V 59A OptiMOS 6 N-MOSFET | Infineon

BSC059N04LS6ATMA1 - 40V 59A OptiMOS 6 N-MOSFET | Infineon

BSC059N04LS6ATMA1 ✓ Active

Specification Comparison

Parameter BSC011N03LSIATMA1 BSC059N04LS6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Product Family OptiMOS™ 30 V —
Channel Type N-Channel —
Drain-to-Source Voltage (VDS) 30 V —
Gate-to-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID) at TA=25°C 37 A —
Continuous Drain Current (ID) at TC=25°C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM value] —
On-State Resistance RDS(on) at VGS=10V 1.1 mΩ (typical) —
Power Dissipation at TA=25°C 2.5 W —
Power Dissipation at TC=25°C 96 W —
Operating Junction Temperature -55 °C to +150 °C —
Package PG-TDSON-8-7 (Surface Mount) PG-TDSON-8-6 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (per JEDEC J-STD-020) —
RoHS Status Compliant Compliant
Technology — OptiMOS 6 (N-channel MOSFET)
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TA=25C — 17 A
Continuous Drain Current (ID) at TC=25C — 49 A
Pulsed Drain Current (ID,pulse) at TC=25C — 59 A
On-Resistance RDS(on) max — 5.9 mOhm at VGS=10 V
Total Power Dissipation at TA=25C — 3 W
Total Power Dissipation at TC=25C — 38 W
Gate-Source Voltage (VGS) max — +/-20 V
Operating Temperature Range — -55C to +150C
Diode Continuous Forward Current (IS) — 38 A at TC=25C
Diode Pulse Current (IS,pulse) — 236 A at TC=25C
Lead-Free — Yes

Datasheets & Resources

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