BSC011N03LSIATMA1 vs BSC059N04LS6ATMA1 Сравнение
Подробное сравнение бок о бок BSC011N03LSIATMA1 от Infineon и BSC059N04LS6ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
BSC011N03LSIATMA1 - 30V N-Ch OptiMOS 1.1mΩ Power MOSFET | Infineon
BSC011N03LSIATMA1 ✓ Активен
Сравнение характеристик
| Параметр | BSC011N03LSIATMA1 | BSC059N04LS6ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,32 | $0,74 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS™ 30 V | — |
| Channel Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (ID) at TA=25°C | 37 A | — |
| Continuous Drain Current (ID) at TC=25°C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM value] | — |
| On-State Resistance RDS(on) at VGS=10V | 1.1 mΩ (typical) | — |
| Power Dissipation at TA=25°C | 2.5 W | — |
| Power Dissipation at TC=25°C | 96 W | — |
| Рабочая температура перехода | -55 °C to +150 °C | — |
| Корпус | PG-TDSON-8-7 (Surface Mount) | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Тип монтажа | Surface Mount | Surface Mount |
| Уровень MSL | 1 (per JEDEC J-STD-020) | — |
| Статус RoHS | Compliant | Compliant |
| Technology | — | OptiMOS 6 (N-channel MOSFET) |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TA=25C | — | 17 A |
| Continuous Drain Current (ID) at TC=25C | — | 49 A |
| Pulsed Drain Current (ID,pulse) at TC=25C | — | 59 A |
| On-Resistance RDS(on) max | — | 5.9 mOhm at VGS=10 V |
| Total Power Dissipation at TA=25C | — | 3 W |
| Total Power Dissipation at TC=25C | — | 38 W |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Диапазон рабочих температур | — | -55C to +150C |
| Diode Continuous Forward Current (IS) | — | 38 A at TC=25C |
| Diode Pulse Current (IS,pulse) | — | 236 A at TC=25C |
| Lead-Free | — | Yes |