BSC011N03LSIATMA1 vs BSC059N04LS6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC011N03LSIATMA1 disebabkan oleh Infineon dan BSC059N04LS6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSC059N04LS6ATMA1 BSC059N04LS6ATMA1 - 40V 59A OptiMOS 6 N-MOSFET | Infineon

BSC059N04LS6ATMA1 - 40V 59A OptiMOS 6 N-MOSFET | Infineon

BSC059N04LS6ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSC011N03LSIATMA1 BSC059N04LS6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS™ 30 V —
Channel Type N-Channel —
Drain-to-Source Voltage (VDS) 30 V —
Gate-to-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID) at TA=25°C 37 A —
Continuous Drain Current (ID) at TC=25°C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM value] —
On-State Resistance RDS(on) at VGS=10V 1.1 mΩ (typical) —
Power Dissipation at TA=25°C 2.5 W —
Power Dissipation at TC=25°C 96 W —
Suhu Hubungan Operasi -55 °C to +150 °C —
Kemasan PG-TDSON-8-7 (Surface Mount) PG-TDSON-8-6 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant Compliant
Technology — OptiMOS 6 (N-channel MOSFET)
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TA=25C — 17 A
Continuous Drain Current (ID) at TC=25C — 49 A
Pulsed Drain Current (ID,pulse) at TC=25C — 59 A
On-Resistance RDS(on) max — 5.9 mOhm at VGS=10 V
Total Power Dissipation at TA=25C — 3 W
Total Power Dissipation at TC=25C — 38 W
Gate-Source Voltage (VGS) max — +/-20 V
Gambaran Suhu Operasi — -55C to +150C
Diode Continuous Forward Current (IS) — 38 A at TC=25C
Diode Pulse Current (IS,pulse) — 236 A at TC=25C
Lead-Free — Yes

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