BSC014N04LSIATMA1 vs BSC010N04LSATMA1 Comparison
Detailed side-by-side comparison of BSC014N04LSIATMA1 by Infineon and BSC010N04LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC014N04LSIATMA1
BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon
BSC014N04LSIATMA1 β ActiveInfineon
BSC010N04LSATMA1
BSC010N04LSATMA1 - 40V 100A OptiMOS 5 N-FET | Infineon
BSC010N04LSATMA1 β ActiveSpecification Comparison
| Parameter | BSC014N04LSIATMA1 | BSC010N04LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.39 | $0.52 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 (trench, thin-wafer) | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID, Tc) | 100 A | β |
| Continuous Drain Current (ID, Ta) | 31 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM rating] | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max at VGS=10 V | 1.4 mOhm | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS absolute maximum] | β |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | β |
| Power Dissipation (PD, Tc) | 96 W | β |
| Power Dissipation (PD, Ta) | 2.5 W | β |
| Operating Temperature Range | -55 C to +150 C | -55C to +150C |
| Package | PG-TDSON-8 FL (TDSON-8 with exposed drain pad) | PG-TDSON-8 FL (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| RoHS Status | Compliant | β |
| Tradename | OptiMOS | β |
| Transistor Polarity | β | N-Channel |
| Drain-Source Breakdown Voltage (VDS) | β | 40 V |
| Gate-Source Voltage (VGS) Max | β | +/- 20 V |
| Continuous Drain Current (ID, Tc=25C) | β | 100 A |
| Continuous Drain Current (ID, Ta=25C) | β | 38 A |
| On-Resistance RDS(on) Max @ VGS=10V | β | 1.0 mOhm |
| On-Resistance RDS(on) Test Condition | β | VGS = 10 V, ID = 50 A |
| Gate Threshold Voltage VGS(th) Typ | β | 2 V |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation (Tc=25C) | β | 139 W |
| Power Dissipation (Ta=25C) | β | 2.5 W |
| RoHS / Halogen-Free | β | RoHS compliant, halogen-free |
| Avalanche Rated | β | 100% avalanche tested |
| Manufacturer | β | Infineon Technologies |