BSC010N04LSATMA1 - 40V 100A OptiMOS 5 N-FET | Infineon
MPN: BSC010N04LSATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.92 | $92.00 |
| 500 | $0.74 | $370.00 |
| 1,000 | $0.61 | $610.00 |
| 3,000 | $0.52 | $1,560.00 |
Drop-in alternatives for BSC010N04LSATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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BSC010N04LSIATMA1
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BSC010N04LST
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View Datasheet →BSC010N04LSATMA1 Maximum Ratings & Electrical Characteristics
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (VDS) | 40 V |
| Gate-Source Voltage (VGS) Max | +/- 20 V |
| Continuous Drain Current (ID, Tc=25C) | 100 A |
| Continuous Drain Current (ID, Ta=25C) | 38 A |
| On-Resistance RDS(on) Max @ VGS=10V | 1.0 mOhm |
| On-Resistance RDS(on) Test Condition | VGS = 10 V, ID = 50 A |
| Gate Threshold Voltage VGS(th) Typ | 2 V |
| Power Dissipation (Tc=25C) | 139 W |
| Power Dissipation (Ta=25C) | 2.5 W |
| Operating Temperature Range | -55C to +150C |
| Package | PG-TDSON-8 FL (SuperSO8 5x6) |
| Mounting Type | Surface Mount |
| MSL Level | 1 |
| RoHS / Halogen-Free | RoHS compliant, halogen-free |
| Technology | OptiMOS 5 |
| Avalanche Rated | 100% avalanche tested |
| Manufacturer | Infineon Technologies |
BSC010N04LSATMA1 Pin Configuration
| Pin 1 | Source (S) — Source connection, internally common with pins 2, 3, 5, 6, 7 |
| Pin 2 | Source (S) — Source connection (low-side Kelvin return recommended) |
| Pin 3 | Source (S) — Source connection |
| Pin 4 | Gate (G) — Gate drive input; logic-level compatible, VGS(th) typ 2 V |
| Pin 5 | Source (S) — Source connection |
| Pin 6 | Source (S) — Source connection |
| Pin 7 | Source (S) — Source connection |
| Pin 8 | Drain (D) — Drain connection; also tied to exposed thermal pad on bottom of package |
Safe Operating Area (DC, Tc=25C)
Typical Applications
BSC010N04LSATMA1 is suitable for 6 applications: 12V Synchronous Rectification in DC-DC Converters, Multi-Phase VRM for Server CPUs and GPUs, Battery Protection and OR-ing in 4S-8S Li-ion Packs, Industrial 24V Hot-Swap and OR-ing Switches, BLDC Motor Drive H-Bridge for Low-Voltage Motors, USB-PD and Fast-Charging Adapters.
12V Synchronous Rectification in DC-DC Converters
The BSC010N04LSATMA1 is the textbook choice for the low-side synchronous rectifier in 12 V buck and forward converters. Its 1.0 mOhm RDS(on) at VGS=10 V cuts conduction loss to under 1% of output power at 30 A, while the low Qg x RDS(on) figure-of-merit keeps switching loss small at 500 kHz - 1 MHz PWM. Placed on the secondary-side switching node with a 4.5 V or 10 V gate drive, it replaces lossy Schottky diodes and lifts overall converter efficiency to 96%+ in server and telecom VRM designs.
Recommended
Multi-Phase VRM for Server CPUs and GPUs
In 4-phase to 8-phase VRMs powering server-class processors and discrete GPUs, the BSC010N04LSATMA1 serves as both the low-side synchronous rectifier and the high-side control FET in 12 V input stages. Its 100 A Tc rating supports 60 A per phase, and the SuperSO8 5x6 land pattern keeps the power loop inductance low when paired with bottom-side power stages. Across a typical 200 A VRM, using this FET in every slot cuts total conduction loss by 30-50% compared to 2-3 mOhm alternatives.
Recommended
Battery Protection and OR-ing in 4S-8S Li-ion Packs
The BSC010N04LSATMA1's 1.0 mOhm RDS(on) makes it a high-efficiency protection and OR-ing switch in 4S to 8S Li-ion battery packs (12 V - 36 V nominal). Its 40 V VDS comfortably handles the highest end of the 8S charge range with safety margin, and the 100 A continuous rating suits high-power e-bike, power-tool, and small-EV applications. Mounted as back-to-back source-to-source with a second identical device, it provides bidirectional disconnect for BMS-controlled isolation.
Recommended
Industrial 24V Hot-Swap and OR-ing Switches
In 24 V industrial bus systems and telecom -48 V OR-ing applications stepped down to 24 V rails, the BSC010N04LSATMA1's 40 V VDS gives ample transient headroom while the 100 A ID supports high-inrush load transients during board insertion. The avalanche-rated silicon absorbs energy from hot-plug events without damage. Used with a hot-swap controller and a sense resistor, it enables < 1 mOhm total path resistance for paralleled power modules.
Recommended
BLDC Motor Drive H-Bridge for Low-Voltage Motors
For 12 V - 24 V BLDC motors in robotics, drones, and small-EV traction, the BSC010N04LSATMA1 fits as the low-side FET of each H-bridge leg. Its 100 A rating easily handles 30 A - 50 A peak motor currents, while the SuperSO8's low thermal resistance supports high PWM duty cycles without heatsinking. The 4.5 V VGS(th) compatibility lets it pair directly with 5 V gate drivers from common MCUs, simplifying integration in compact motor-control PCBs.
Recommended
USB-PD and Fast-Charging Adapters
The BSC010N04LSATMA1 is well-suited to synchronous rectification in 65 W - 100 W USB Power Delivery adapters where 12 V - 20 V outputs at 5 A are common. Its 1.0 mOhm RDS(on) limits conduction loss to under 300 mW at full load, helping adapters meet stringent DOE Level VI and CoC Tier 2 efficiency targets. The SuperSO8 5x6 footprint fits dense flyback and active-clamp forward topologies with 100 W - 150 W power levels.
Recommended
Recommended Products Summary
Engineering reference data for BSC010N04LSATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC010N04LSIATMA1 | BSC010N04LST | BSC014N04LSIATMA1 | ISC015N04NM5ATMA1 |
|---|---|---|---|---|---|
| Package | SuperSO8 5x6 (PG-TDSON-8 FL) | SuperSO8 5x6 - same | SuperSO8 5x6 - same | SuperSO8 5x6 - same | SuperSO8 5x6 - same |
| Brand | Infineon Technologies | Infineon Technologies - same | Infineon Technologies - same | Infineon Technologies - same | Infineon Technologies - same |
| VDS Max | 40 V | 40 V | 40 V | 40 V | 40 V |
| Continuous Drain Current (Tc=25C) | 100 A | 100 A | 100 A | [DATA_NEEDED] | [DATA_NEEDED] |
| RDS(on) Max @ VGS=10V | 1.0 mOhm | 1.0 mOhm | 1.0 mOhm | 1.4 mOhm | 1.5 mOhm |
| VGS(th) Typ | 2 V | 2 V | 2 V | 2 V | 2 V |
| Power Dissipation (Tc=25C) | 139 W | 139 W | 139 W | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology / Generation | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Unit Price (qty 1, USD) | $1.42 | [DATA_NEEDED] | [DATA_NEEDED] | $1.20 - $1.30 | $1.05 - $1.15 |
| RoHS / Halogen-Free | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
Key Differentiators
- Lowest RDS(on) in the 40 V SuperSO8 Infineon family at 1.0 mOhm (vs BSC014N04LSIATMA1)
- Higher continuous current rating (100 A Tc) than the '015' OptiMOS 5 sibling (vs ISC015N04NM5ATMA1)
- 100% avalanche-tested ruggedness for transient hot-plug events (vs FDC600N04S (cross-package reference only))
Design Notes
The 139 W power dissipation rating for BSC010N04LSATMA1 is only achieved with the case held at 25C. On a real FR4 PCB the practical dissipation limit is set by the copper area connected to the SuperSO8 drain tab. Estimated: with 2 oz copper on a 1 square inch pad and 9 thermal vias, RthJA drops from ~62 C/W (minimum pad) to ~35 C/W; at 2 W dissipation the junction rises only 70C above ambient, supporting continuous 30 A loads without a heatsink.
Place the gate-drive return trace directly to the source pin (pin 1 or pin 4) rather than to the system ground plane. This Kelvin-source connection prevents the high di/dt drain-current transient from coupling into the gate-drive loop, which would otherwise cause parasitic turn-on and shoot-through. Estimated: with proper Kelvin routing the dV/dt immunity improves from <5 V/ns to >15 V/ns, eliminating the need for negative gate-drive bias in most 500 kHz designs.
Choose the gate-drive voltage based on the application's switching-frequency vs conduction-loss trade-off. At VGS=10 V the BSC010N04LSATMA1 operates at full 1.0 mOhm RDS(on) and is suited for 100 kHz - 1 MHz designs. At VGS=4.5 V the RDS(on) roughly doubles, raising conduction loss 2x; this is acceptable for sub-300 kHz designs where the lower gate-drive dissipation and simpler bootstrap-rail design outweigh the loss penalty.
Do not parallel two BSC010N04LSATMA1 devices without individual gate-source resistors (10 ohm - 100 ohm) on each gate. Despite identical lot-to-lot specs, threshold-voltage mismatch as low as 0.2 V can cause one device to take most of the current during turn-on, leading to thermal runaway. Individual gate resistors slow the di/dt, forcing the parallel pair to share current within 5% even with worst-case VGS(th) mismatch.
Use an aggressive thermal-via array directly under the SuperSO8 drain tab: a 4x4 array of 0.3 mm vias in 0.6 mm pitch, filled with copper and capped on both sides. Estimated: this via array cuts the PCB-to-bottom-side thermal resistance by ~40% compared to a single via, reducing RthJA from ~40 C/W to ~24 C/W on a 2 oz 4-layer board and lifting the practical continuous-current ceiling by 30% at the same temperature rise.
Compliance Information
RoHS compliant and halogen-free per Infineon OptiMOS 5 datasheet family. MSL1 rated per JEDEC J-STD-020. Not AEC-Q100 qualified - this part targets industrial and consumer power applications, not automotive.
