BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon
MPN: BSC014N04LSIATMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.89 | $0.89 |
| 10 | $0.74 | $7.40 |
| 100 | $0.59 | $59.00 |
| 500 | $0.46 | $230.00 |
| 1,000 | $0.39 | $390.00 |
Drop-in alternatives for BSC014N04LSIATMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
BSC014N04LSATMA1
β Drop-Inπ Reference alternative (not in catalog)
BSC016N04LSGATMA1
β Drop-Inπ Reference alternative (not in catalog)
BSC022N04LS6ATMA1
β Drop-Inβ In Stock
$0.66 / Unit
View Datasheet βNTMFS4C013N
β Drop-Inπ Reference alternative (not in catalog)
SiRA60DP
β Drop-Inπ Reference alternative (not in catalog)
BSC014N04LSIATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | OptiMOS 5 (trench, thin-wafer) |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID, Tc) | 100 A |
| Continuous Drain Current (ID, Ta) | 31 A |
| RDS(on) max at VGS=10 V | 1.4 mOhm |
| Power Dissipation (PD, Tc) | 96 W |
| Power Dissipation (PD, Ta) | 2.5 W |
| Operating Temperature Range | -55 C to +150 C |
| Package | PG-TDSON-8 FL (TDSON-8 with exposed drain pad) |
| Mounting Type | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant |
| Tradename | OptiMOS |
BSC014N04LSIATMA1 Pin Configuration
| Pin 1 | Source β Source (pin 1 of 8) |
| Pin 2 | Source β Source |
| Pin 3 | Source β Source |
| Pin 4 | Gate β Gate |
| Pin 5 | Drain β Drain |
| Pin 6 | Drain β Drain |
| Pin 7 | Drain β Drain |
| Pin 8 | Drain β Drain |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
BSC014N04LSIATMA1 is suitable for 6 applications: 12 V Synchronous Rectification in SMPS, OR-ing FET in Redundant Power Architectures, 24 V Industrial Motor-Drive Low-Side Switch, USB-PD and High-Current Hot-Swap / e-Fuse, 1- to 4-Cell Li-Ion Battery Protection FET, Telecom / Server 12 V Point-of-Load Stage.
12 V Synchronous Rectification in SMPS
The BSC014N04LSIATMA1's 40 V VDS, 1.4 mOhm max RDS(on), and low Qg make it a strong choice for the synchronous-rectifier FET in 12 V SMPS, including buck, half-bridge, and full-bridge topologies. With 96 W power handling on the case and 100 A continuous drain current at Tc, it carries the full load of high-current server, telecom, and datacom rails while keeping conduction loss low. The exposed drain pad allows direct thermal coupling to a 1+ oz inner-plane copper pour with thermal vias, sustaining 60-80 A real loads on a 4-layer board. Compared with a Schottky diode, the synchronous stage recovers 5-8 percent system efficiency at full load, which directly translates into lower heatsink cost and higher power density.
Recommended
OR-ing FET in Redundant Power Architectures
In N+1 redundant 12 V power shelves, the BSC014N04LSIATMA1 functions as an OR-ing switch between a power module and the shared load bus. Its 1.4 mOhm RDS(on) keeps conduction loss under 7 W at 70 A continuous, well within the thermal envelope of the TDSON-8 FL package on a 2-oz copper pad. The fast turn-off capability of OptiMOS 5 minimizes reverse-current let-through during fault isolation, protecting upstream converters from back-feed. The PG-TDSON-8 FL footprint is footprint-compatible with industry-standard Power-SO8 parts, simplifying second sourcing.
Recommended
24 V Industrial Motor-Drive Low-Side Switch
The BSC014N04LSIATMA1 acts as the low-side switch in 24 V brushless-DC and stepper-driver half-bridges for industrial automation. The 40 V VDS rating provides 60 percent headroom over a 24 V nominal bus, tolerating load-dump transients without avalanche. Its 100 A pulsed-current capability supports motor in-rush and stall-current events, while the small TDSON footprint allows compact multi-axis driver layouts. The exposed drain pad ties directly to a copper heatsink plane, sustaining continuous 30-40 A switching with no airflow.
Recommended
USB-PD and High-Current Hot-Swap / e-Fuse
The BSC014N04LSIATMA1 is well suited to USB-Power-Delivery and e-fuse roles that demand high inrush and low conduction loss. In a 20 V / 5 A Type-C port, the 40 V VDS rating covers PD's 20 V negotiated bus, and the 1.4 mOhm RDS(on) holds full-load dissipation under 0.5 W. The fast body-diode reverse recovery of OptiMOS 5 limits ringing during hot-insertion events, improving EMI margin and reducing the need for snubbers. The TDSON-8 FL land pattern fits inside a Type-C connector keep-out.
Recommended
1- to 4-Cell Li-Ion Battery Protection FET
The BSC014N04LSIATMA1 can be paired back-to-back as the protection switch in 1- to 4-cell Li-ion battery packs. The 40 V VDS rating easily handles the 16.8 V maximum charge voltage of a 4S pack, and the 1.4 mOhm RDS(on) on each side keeps total discharge-path resistance under 3 mOhm. The TDSON-8 FL package accommodates two dice on a small footprint, saving PCB space in pack designs. The part's industrial temperature grade supports -40 C to +85 C operation typical of consumer and light-industrial packs.
Recommended
Telecom / Server 12 V Point-of-Load Stage
In 48 V-to-12 V intermediate-bus converters feeding downstream POL regulators, the BSC014N04LSIATMA1 can serve as the secondary-side synchronous rectifier in isolated topologies like half-bridge and full-bridge converters. The 40 V VDS comfortably covers the 12 V rail plus reflected-reset transients, and the 1.4 mOhm RDS(on) combined with low Qg keeps peak efficiency above 96 percent at 200-300 kHz switching. The exposed drain pad enables direct heatsink attachment or copper-pour cooling on densely packed server boards.
Recommended
Recommended Products Summary
Engineering reference data for BSC014N04LSIATMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC014N04LSATMA1 | BSC016N04LSGATMA1 | BSC022N04LS6ATMA1 | NTMFS4C013N | SiRA60DP |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi | Vishay Intertechnology |
| Package | PG-TDSON-8 FL | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | SO-8FL / Power-SO8 (5x6 mm) - same land pattern | PowerPAK SO-8 (5x6 mm) - same land pattern |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| RDS(on) max @ VGS=10V | 1.4 mOhm | 1.4 mOhm | 1.6 mOhm | 2.2 mOhm | 1.3 mOhm | 1.5 mOhm |
| Continuous Drain Current (ID, Tc) | 100 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation (PD, Tc) | 96 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | onsemi trench | Vishay TrenchFET |
| Unit Price @ 1k (USD) | 0.39 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Industry-leading RDS(on) x Qg figure of merit (vs BSC026N04LSATMA1)
- Lower RDS(on) than cross-brand Power-SO8 alternatives (vs SiRA60DP)
- Industrial temperature grade in the same family (vs BSC014N04LSATMA1)
Design Notes
Estimated: at continuous 60 A with RDS(on) = 1.4 mOhm (after Tj rise derate to ~1.7 mOhm at 100 C), conduction loss is roughly 6 W. On a 4-layer 1-oz inner copper pad with 12 thermal vias (0.3 mm drill, 1 oz plating), RthJA drops to ~30-40 C/W; this yields a Tj rise of 180-240 C above 25 C ambient, exceeding the 150 C rating. Reduce continuous load to 35-45 A or attach a small heatsink to the drain pad. Always derate against the manufacturer's RthJC and copper-pad recommendation rather than the datasheet Ta=25 C number.
Use a wide, uninterrupted source copper pour on the top layer to minimize common-source inductance, which otherwise couples di/dt into the gate loop and causes ringing/miller-induced shoot-through. Place the gate-driver within 5 mm of the gate pin and use a 10 ohm gate resistor to control edge rates. Stitch the exposed drain pad with an array of thermal vias (12-20 vias, 0.3 mm finished) connecting to a 2 oz inner copper plane; this provides both thermal relief and a low-impedance return for switching currents.
Do not drive the gate above the absolute-maximum VGS rating (typically +/-20 V for OptiMOS 5) without a gate-source Zener or TVS clamp - ringing from the gate-drive loop can otherwise punch through the oxide. Ensure VDS stays below the 40 V rating during turn-off spikes; a 50 V TVS or RC snubber across the drain-source is recommended when driving highly inductive loads. Confirm pulsed drain current (IDM) rating for inrush events before relying on the 100 A Tc continuous figure for short-duration peaks.
For switching frequencies above 200 kHz, the gate-loop parasitic resonance can excite miller-induced turn-on of the complementary FET in a half-bridge. Mitigate this by adding a 4.7 kohm gate-to-source resistor on each FET (placed close to the gate pin) and using a gate-drive supply that is well bypassed at the IC. For very high dV/dt applications, consider a Ferrite bead in series with the gate to damp the resonance without slowing switching too much.
Compliance Information
RoHS and halogen-free per Infineon product page. Industrial temperature grade (-55 C to +150 C). Not AEC-Q100 qualified; for automotive, contact Infineon about the equivalent automotive OptiMOS 5 part.
