BSC014N06NSATMA1 vs BSC016N06NSATMA1 Comparison

Detailed side-by-side comparison of BSC014N06NSATMA1 by Infineon and BSC016N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC014N06NSATMA1 BSC014N06NSATMA1 - 60V 100A N-Ch OptiMOS 5 MOSFET | Infineon

BSC014N06NSATMA1 - 60V 100A N-Ch OptiMOS 5 MOSFET | Infineon

BSC014N06NSATMA1 βœ“ Active

Specification Comparison

Parameter BSC014N06NSATMA1 BSC016N06NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.89 $0.65
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 60 V 60 V
Gate-Source Voltage (VGS) Max +/- 20 V β€”
Continuous Drain Current (ID) at Ta 30 A β€”
Continuous Drain Current (ID) at Tc 100 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
On-Resistance RDS(on) Typ @ VGS=10V 1.4 mOhm β€”
On-Resistance RDS(on) Max @ VGS=10V 1.45 mOhm β€”
Power Dissipation (Ta) 2.5 W β€”
Power Dissipation (Tc) 156 W β€”
Operating Temperature Range -55C to +150C -55 Β°C to +150 Β°C
Package PG-TDSON-8-17 (SuperSO8 5x6 mm) PG-TDSON-8 FL (SuperSO8 5x6)
Mounting Type Surface Mount Surface Mount
MSL Level 1 1 (unlimited)
RoHS Status Compliant Compliant
Technology OptiMOS 5 (shielded-gate trench) OptiMOSβ„’ 5
Product Series β€” OptiMOSβ„’ 5 60V
Channel Type β€” N-Channel
Continuous Drain Current (ID, Tc) β€” 100 A
Continuous Drain Current (ID, TA) β€” 30 A
On-Resistance RDS(on) max @ VGS=10V β€” 1.6 mΞ©
Total Gate Charge (Qg) β€” 71 nC
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical value]
Power Dissipation (TA) β€” 2.5 W
Power Dissipation (TC) β€” 139 W
Gate Drive (recommended) β€” 10 V

Datasheets & Resources

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