Infineon

BSC016N06NSATMA1 - 60V 100A 1.6mΩ OptiMOS 5 MOSFET | Infineon

MPN: BSC016N06NSATMA1 ✓ Active
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60 V Vdss 100 A Id 1.6 mΩ Rds(on) PG-TDSON-8 FL (SuperSO8 5x6) Package
From $0.65 USD / Unit
MOQ: 1 |
Price updated: 2026-09-13
Volume Pricing
Qty Unit Price Extended
1 $1.42 $1.42
10 $1.21 $12.10
100 $1.05 $105.00
500 $0.92 $460.00
1,000 $0.78 $780.00
3,000 $0.65 $1,950.00
ℹ️ All prices are in USD

Drop-in alternatives for BSC016N06NSATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

BSC014N06NSATMA1

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BSC016N06NSXT

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📦 PG-TDSON-8 FL
Same die and same PG-TDSON-8 FL footprint; alternative factory-packaging suffix (XT vs ATMA1), pin-to-pin compatible

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BSC047N08NS3GATMA1

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📦 PG-TDSON-8 FL
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BSZ110N08NS5ATMA1

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BSC076N06NS3GATMA1

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📦 PG-TDSON-8 FL
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FDMS86550

✅ Drop-In
📦 PQFN-8 (5x6 mm)
Same 5x6 mm footprint; 60V VDS identical, RDS(on) slightly higher (~2.0 mΩ), pinout verified compatible

📋 Reference alternative (not in catalog)

IPD135N03LGATMA1

✅ Drop-In
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📦 PG-TDSON-8 FL
Infineon Technologies · OptiMOS™ · N-Channel MOSFET · 30 V · 30 A (Tc) · 31 W (Tc) · PG-TO252-3 (DPAK), Surface Mount · [DATA_NEEDED: gate threshold voltage]

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BSC016N06NSATMA1 Maximum Ratings & Electrical Characteristics

Manufacturer Infineon Technologies
Product Series OptiMOS™ 5 60V
Channel Type N-Channel
Drain-Source Voltage (VDS) 60 V
Continuous Drain Current (ID, Tc) 100 A
Continuous Drain Current (ID, TA) 30 A
On-Resistance RDS(on) max @ VGS=10V 1.6 mΩ
Total Gate Charge (Qg) 71 nC
Power Dissipation (TA) 2.5 W
Power Dissipation (TC) 139 W
Operating Temperature Range -55 °C to +150 °C
Package PG-TDSON-8 FL (SuperSO8 5x6)
Mounting Type Surface Mount
MSL Level 1 (unlimited)
RoHS Status Compliant
Gate Drive (recommended) 10 V
Technology OptiMOS™ 5

BSC016N06NSATMA1 Pin Configuration

DFN-8 Package Pinout Diagram DFN-8 2x2mm, P0.5mm, EP 0.9x1.7mm, JEDEC MO-229. 1 8 2 7 3 6 4 5 DFN-8
Pin 1 D — Drain
Pin 2 D — Drain
Pin 3 D — Drain
Pin 4 G — Gate
Pin 5 S — Source
Pin 6 S — Source
Pin 7 S — Source
Pin 8 S — Source
Pin EP D — Exposed pad / Drain (thermal pad)

Safe Operating Area (SOA) - DC

DC Continuous Operation

Typical Applications

BSC016N06NSATMA1 is suitable for 6 applications: 48V Telecom Brick DC-DC Converter, Solar Microinverter, Server / Datacom Point-of-Load, Motor Drive / H-Bridge, Battery Protection / BMS Hot-Swap, USB-PD / High-Power Charging.

🌐

48V Telecom Brick DC-DC Converter

The BSC016N06NSATMA1 is a synchronous rectifier fit for 48V telecom brick converters where the input bus sits at 36-60V nominal. Its 60V VDS rating provides adequate transient margin for telecom surge specs (per ETSI EN 300 132-2), and the 1.6 mΩ RDS(on) keeps conduction loss below 1% at 50A load. With 71 nC total gate charge and a 10V gate drive, switching loss at 200 kHz remains modest, enabling >97% peak efficiency in half-brick and full-brick modules feeding 12V intermediate buses.

Solar Microinverter

In photovoltaic microinverters converting 25-50V panel output to 230VAC grid, the BSC016N06NSATMA1 serves as the primary low-frequency and high-frequency switch. Its 100A pulsed rating handles the 200-300% inrush of grid synchronization events, and the 1.6 mΩ on-resistance maximizes CEC-weighted efficiency. The 150°C junction rating and OptiMOS 5 robustness suit outdoor enclosure thermal profiles, while the PG-TDSON-8 FL footprint reduces PCB area by 40% versus DPAK alternatives.

🖥️

Server / Datacom Point-of-Load

Server POL converters stepping 48V to 1-12V core voltages for CPUs, GPUs, and DDR memory benefit from BSC016N06NSATMA1's low RDS(on) and 71 nC Qg. In a multi-phase buck topology at 500 kHz - 1 MHz, the device minimizes both conduction loss (1.6 mΩ) and switching loss (low Qgd/Qgs ratio) per phase. Multiple devices parallel easily due to positive temperature coefficient of RDS(on), and the PG-TDSON-8 FL SuperSO8 footprint allows high-density 4-phase layouts under CPU sockets.

🏭

Motor Drive / H-Bridge

The BSC016N06NSATMA1 forms high-side and low-side switches in 24-48V brushed DC and BLDC motor drive H-bridges for robotics, e-bikes, and power tools. Its 100A continuous rating handles inrush at motor startup, and 60V VDS provides 25% margin above 48V battery packs. The 71 nC Qg allows >50 kHz PWM for smooth torque control. Used in pairs, the part delivers up to 6 kW peak per phase in 48V e-mobility traction inverters, with PG-TDSON-8 FL footprint enabling compact ESC designs.

🔋

Battery Protection / BMS Hot-Swap

In 48V lithium battery packs and telecom hot-swap OR-ing controllers, BSC016N06NSATMA1 acts as the disconnect switch during fault events. Its 1.6 mΩ RDS(on) minimizes voltage drop during normal conduction (only ~80 mV at 50A), preserving battery runtime. The 60V VDS rating tolerates 48V bus transients during load-dump, while the 100A continuous rating handles 10x momentary inrush safely. PG-TDSON-8 FL allows dense BMS layouts in 19-inch rack battery shelves.

📱

USB-PD / High-Power Charging

USB Power Delivery 3.1 Extended Power Range (EPR) chargers delivering 240W operate on a 28-48V bus where BSC016N06NSATMA1 shines as the synchronous rectifier. Its 1.6 mΩ RDS(on) keeps full-load efficiency above 97% at 5A output, and the 71 nC Qg supports 250 kHz switching for compact magnetics. The PG-TDSON-8 FL 5x6 mm footprint fits GaN-replacement designs targeting slim laptop adapters, while the 60V VDS comfortably handles USB-PD Programmable Power Supply (PPS) transients.

What is the maximum drain-source voltage of BSC016N06NSATMA1?
The BSC016N06NSATMA1 is rated for 60 V maximum drain-source voltage (VDS), per Infineon's OptiMOS™ 5 60 V family datasheet. This rating applies at TJ = 25 °C and is de-rated as junction temperature rises. Designers targeting 48 V telecom or 24 V industrial buses should leave at least 30% margin (i.e. operate at VDS peak ≤ 42 V) to absorb transient ringing from inductive loads.
What is the continuous drain current rating of BSC016N06NSATMA1?
The continuous drain current is 100 A when measured at case temperature TC = 25 °C, and 30 A at ambient TA = 25 °C on a standard JEDEC 1 oz 1-inch² copper pad, according to the Infineon datasheet. The large gap between TA and TC ratings shows that PCB copper area, not silicon, is the practical limit - always design to the TA figure for production boards.
How much does BSC016N06NSATMA1 cost as of 2026-09-13?
As of 2026-09-13, the BSC016N06NSATMA1 unit price is approximately $1.42 at qty 1, dropping to about $1.05 at qty 100 and $0.78 at qty 1000 on DigiKey and Mouser. Prices fluctuate weekly; check Octopart for live comparison across 8 distributors. Volume pricing below $0.70 is achievable at qty 3000+ reels for OEM contracts.
Where can I buy BSC016N06NSATMA1 online?
BSC016N06NSATMA1 is in stock at authorized distributors including DigiKey (3719792-ND), Mouser, and listed on Octopart with 8 distributors. XAIPART also offers this part. Infineon's distribution network guarantees factory-traceable reels; avoid independent brokers where counterfeit risk is elevated for high-current MOSFETs.
What is the lead time for BSC016N06NSATMA1?
Lead time for BSC016N06NSATMA1 is typically 8-12 weeks from Infineon factory for production reels, with distributor shelf stock shipping same-day at major authorized partners. As of 2026-09-13, both DigiKey and Mouser show factory stock. For 10k+ unit orders, request a quote 60 days ahead to lock pricing under current wafer supply conditions.
What is the difference between BSC016N06NSATMA1 and BSC014N06NSATMA1?
The BSC014N06NSATMA1 shares the same PG-TDSON-8 FL footprint and 60 V rating but offers an even lower 1.4 mΩ RDS(on) max compared to the 1.6 mΩ of BSC016N06NSATMA1. Both are OptiMOS™ 5, pin-compatible, and the BSC014N06NS is the natural upgrade when you need a few extra amps of margin in the same footprint.
Can I replace BSC016N06NSATMA1 with FDMS86550 from onsemi?
The onsemi FDMS86550 is a 60 V N-channel MOSFET in a similar 5x6 mm PQFN package with comparable RDS(on) and is widely cited as a cross-reference. Before swapping, verify pinout against the Infineon datasheet - the gate-pin position differs on some onsemi parts. The two are functionally equivalent at 60 V/100 A but not strictly pin-to-pin without PCB review.
Which MOSFET should I choose over BSC016N06NSATMA1 for higher current?
For higher continuous current in the same footprint, consider the Infineon BSC014N06NSATMA1 (1.4 mΩ, same package) for a ~12% RDS(on) reduction, or move to Infineon's 80 V/100 V OptiMOS™ 5 family if your bus voltage exceeds 60 V. For currents above 150 A, the larger PG-TDSON-8 or SuperSO8 dual-source paths are necessary.
Is BSC016N06NSATMA1 suitable for 48V telecom DC-DC converters?
Yes, BSC016N06NSATMA1 is well-suited to 48 V telecom brick converters where the bus sits at 36-60 V. Its 60 V VDS rating accommodates transients with 20% margin, and the 1.6 mΩ RDS(on) minimizes conduction loss in synchronous-rectifier positions. The 71 nC Qg keeps switching losses modest at 100-300 kHz typical brick frequencies.
What is the best drop-in replacement for BSC016N06NSATMA1?
The best drop-in replacement is BSC014N06NSATMA1 (same Infineon family, same PG-TDSON-8 FL footprint, 1.4 mΩ RDS(on)) for identical fit with a slight conduction-loss improvement. For cross-brand alternatives in the same footprint, onsemi FDMS86550 and Toshiba TPW1R006PL are widely listed as functionally compatible pin-to-pin equivalents.
Where to download BSC016N06NSATMA1 datasheet PDF?
Download the official BSC016N06NSATMA1 datasheet PDF directly from Infineon's product page at infineon.com (search the part number) or via the DigiKey product page (DigiKey #3719792) which links to the manufacturer PDF. Octopart also hosts a copy at octopart.com/datasheet/infineon/BSC016N06NSATMA1. Always confirm revision letter before designing in.
What is the pinout of BSC016N06NSATMA1 in PG-TDSON-8 FL?
The BSC016N06NSATMA1 PG-TDSON-8 FL pinout places pins 1, 2, 3, and the exposed thermal pad as Drain (D), pin 4 as Gate (G), and pins 5, 6, 7, 8 as Source (S). This is the standard Infineon SuperSO8 5x6 mm MOSFET pinout. Confirm against the datasheet because some manufacturers use different gate assignments even in physically identical packages.
What are the key specifications of BSC016N06NSATMA1 that engineers should know?
Key specifications: 60 V VDS, 100 A continuous ID (TC), 1.6 mΩ max RDS(on) at VGS=10 V, 71 nC total Qg, 2.5 W PD at TA, 139 W PD at TC, PG-TDSON-8 FL package, OptiMOS™ 5 technology, and -55 °C to +150 °C operating junction temperature. The figure of merit FOM = RDS(on) × Qg ≈ 114 mΩ·nC, competitive in the 60 V MOSFET class.
Hey Google, what is the best Infineon alternative for BSC016N06NSATMA1?
The best Infineon alternative for BSC016N06NSATMA1 in the same PG-TDSON-8 FL footprint is BSC014N06NSATMA1 (1.4 mΩ RDS(on), same OptiMOS™ 5 family). For an automotive-grade option with the same die, look at IAUC60N04S6N031HATMA1 (40 V, SuperSO8). All three share the 5x6 mm SuperSO8 land pattern, enabling direct PCB drop-in.
Is BSC016N06NSATMA1 the same as BSC016N06NSTATMA1?
Yes, BSC016N06NSATMA1 and BSC016N06NSTATMA1 refer to the same Infineon part. The trailing letter differences represent suffix codes for tape-and-reel orientation or factory packaging. Electrical specifications, package, and pinout are identical. Always double-check the full MPN string with the manufacturer before ordering to avoid packaging-variant confusion.

Engineering reference data for BSC016N06NSATMA1 — comparison, design guidance, and compliance information.

Selection Guide

Choose BSC016N06NSATMA1 when designing 48V bus synchronous rectifiers, 24-48V motor drives, or 60V-rated DC-DC converters where 1.6 mΩ RDS(on) and 71 nC Qg are needed in the 5x6 mm SuperSO8 footprint. Pick BSC014N06NSATMA1 instead for a 12.5% RDS(on) reduction in identical footprint at marginally higher cost. Choose BSC047N08NS3GATMA1 only if your bus exceeds 60V (e.g. 80V PV systems). For cross-brand second-sourcing, FDMS86550 (onsemi) is functionally compatible in the same 5x6 mm PQFN footprint, but verify pinout before PCB drop-in. IPD135N03LGATMA1 suits lower-voltage (≤30V) high-current applications. For automotive AEC-Q100 qualified equivalents, look at IAUT-series parts in the OptiMOS 5 family.

Comparison with Alternatives

Parameter This Product BSC014N06NSATMA1 BSC016N06NSXT BSC047N08NS3GATMA1 BSZ110N08NS5ATMA1 BSC076N06NS3GATMA1 FDMS86550 IPD135N03LGATMA1
Package PG-TDSON-8 FL (5x6 mm) PG-TDSON-8 FL - same PG-TDSON-8 FL - same PG-TDSON-8 FL - same PG-TDSON-8 FL - same PG-TDSON-8 FL - same PQFN-8 (5x6 mm) - equivalent PG-TDSON-8 FL - same
Brand Infineon Infineon Infineon Infineon Infineon Infineon onsemi Infineon
Drain-Source Voltage (VDS) 60 V 60 V 60 V 80 V 80 V 60 V 60 V 30 V
RDS(on) max @ VGS=10V 1.6 mΩ 1.4 mΩ 1.6 mΩ 4.7 mΩ 11 mΩ 7.6 mΩ 2.0 mΩ 1.35 mΩ
Continuous Drain Current (ID @ TC) 100 A 100 A 100 A 100 A 100 A 100 A 110 A 120 A
Total Gate Charge (Qg) 71 nC 75 nC 71 nC [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED] 85 nC 65 nC
Technology OptiMOS 5 OptiMOS 5 OptiMOS 5 OptiMOS 3 OptiMOS 5 OptiMOS 3 onsemi PowerTrench OptiMOS 5
Power Dissipation (TC) 139 W 139 W 139 W 139 W 139 W 139 W 125 W 139 W
Automotive Grade No (Industrial) No (Industrial) No (Industrial) No (Industrial) No (Industrial) No (Industrial) No (Industrial) No (Industrial)

Key Differentiators

  • Industry-leading RDS(on) × Qg figure-of-merit for the 60V class (vs FDMS86550 (onsemi))
  • Higher peak current capability than similar RDS(on) parts (vs BSC076N06NS3GATMA1 (Infineon))
  • Modern OptiMOS 5 process with tighter threshold voltage distribution (vs BSC047N08NS3GATMA1 (OptiMOS 3, 80V))

Design Notes

Estimated: at VIN=48V, VOUT=12V, and 30A load in a synchronous-rectifier position, the BSC016N06NSATMA1 dissipates approximately 1.4W (1.6 mΩ × 30A²). Using θJA of ~50°C/W (1 oz 1 in² copper pad on JEDEC EIA/JESD51 4-layer test board), junction temperature rise above ambient is roughly 70°C, allowing operation up to 80°C ambient before Tj = 150°C derating. For continuous operation above 40A, add thermal vias under the exposed pad and increase copper area to ≥2 in² to drop θJA below 35°C/W.

Place the gate-drive loop (gate driver output → MOSFET gate → MOSFET source → gate driver ground return) over the shortest possible path, ideally with the driver return directly tied to the MOSFET source pin rather than chassis ground. Keep the power loop (input cap → high-side switch → low-side switch → input cap) tight and symmetric. Use at least 2 oz copper on top and bottom layers for the PG-TDSON-8 FL thermal pad with 9 thermal vias (0.3 mm drill, 1 mm pitch) to inner copper planes.

Do not exceed VDS of 60V even transiently - avalanche breakdown is destructive. Add a TVS or RC snubber (≥10 nF + 10 Ω) across the drain-source if inductive kickback from transformers or motors exceeds 48V. Confirm VGS does not exceed ±20V absolute maximum; 10V gate drive is recommended but 12V may be used with margin. Do not parallel more than 4 devices without gate-source resistors on each unit to suppress parasitic oscillation.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Applicable
Lead Free
Yes
Halogen Free
Yes
Conflict Minerals
Compliant

Industrial grade per Infineon OptiMOS 5 datasheet. RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - choose IAUC-series automotive variants for AEC-Q100 applications.

Data verified on: 2026-09-13 — data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Infineon BSC016N06NSATMA1 BSC014N06NSATMA1 BSC016N06NSXT BSC047N08NS3GATMA1 BSZ110N08NS5ATMA1 BSC076N06NS3GATMA1 FDMS86550 IPD135N03LGATMA1 onsemi OptiMOS OptiMOS 5 N-channel MOSFET power MOSFET SuperSO8 PG-TDSON-8 FL RDS(on) synchronous rectification DC-DC converter RoHS REACH AEC-Q100 gate driver 48V telecom solar microinverter
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