BSC019N04LSTATMA1 vs BSC018NE2LSATMA1 Comparison
Detailed side-by-side comparison of BSC019N04LSTATMA1 by Infineon and BSC018NE2LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC019N04LSTATMA1
BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon
BSC019N04LSTATMA1 β Active
Specification Comparison
| Parameter | BSC019N04LSTATMA1 | BSC018NE2LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.21 | $0.78 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 25V (Trench) |
| Drain-Source Voltage (VDS) | 40 V | 25 V |
| Continuous Drain Current (ID, Tc=25C) | 161 A | β |
| Continuous Drain Current (ID, Ta=25C) | 28 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed ID limit] | β |
| On-Resistance RDS(on) max @ VGS=10V | 1.9 mOhm | β |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Gate Threshold Voltage VGS(th) typ | 1.7 V | β |
| Total Gate Charge Qg typ | 85 nC | β |
| Power Dissipation PD (Tc=25C) | 94 W | β |
| Operating Temperature Range | -55 C to +150 C | -55Β°C to +150Β°C (TJ) |
| Package | TDSON-8 (SuperSO8) 5x6 mm | PG-TDSON-8-1 (8-PowerTDFN) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited) | [DATA_NEEDED: MSL level] |
| RoHS Status | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes | β |
| Avalanche Rated | Yes | β |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID, Tc) | β | 100 A |
| Continuous Drain Current (ID, Ta) | β | 29 A |
| On-Resistance RDS(on) @ VGS=10V | β | 1.8 mΞ© (typical) |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Gate Charge (Qg) | β | 39 nC @ VGS=10V |
| Output Capacitance (Coss) | β | 2800 pF @ VDS=12V |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 69 W |