BSC019N04LSTATMA1 vs BSC018NE2LSATMA1 对比
详细并排对比 BSC019N04LSTATMA1 出自 Infineon 和 BSC018NE2LSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC019N04LSTATMA1 | BSC018NE2LSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.21 | $0.78 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 25V (Trench) |
| Drain-Source Voltage (VDS) | 40 V | 25 V |
| Continuous Drain Current (ID, Tc=25C) | 161 A | — |
| Continuous Drain Current (ID, Ta=25C) | 28 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed ID limit] | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.9 mOhm | — |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate Threshold Voltage VGS(th) typ | 1.7 V | — |
| Total Gate Charge Qg typ | 85 nC | — |
| Power Dissipation PD (Tc=25C) | 94 W | — |
| 工作温度范围 | -55 C to +150 C | -55°C to +150°C (TJ) |
| 封装 | TDSON-8 (SuperSO8) 5x6 mm | PG-TDSON-8-1 (8-PowerTDFN) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | 1 (unlimited) | [DATA_NEEDED: MSL level] |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes | — |
| Avalanche Rated | Yes | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 100 A |
| Continuous Drain Current (ID, Ta) | — | 29 A |
| On-Resistance RDS(on) @ VGS=10V | — | 1.8 mΩ (typical) |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Charge (Qg) | — | 39 nC @ VGS=10V |
| Output Capacitance (Coss) | — | 2800 pF @ VDS=12V |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 69 W |