BSC019N04LSTATMA1 vs BSC050N04LSGATMA1 Comparison
Detailed side-by-side comparison of BSC019N04LSTATMA1 by Infineon and BSC050N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC019N04LSTATMA1
BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon
BSC019N04LSTATMA1 β ActiveInfineon
BSC050N04LSGATMA1
BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon
BSC050N04LSGATMA1 β ActiveSpecification Comparison
| Parameter | BSC019N04LSTATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.21 | $0.41 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 3 (trench MOSFET) |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID, Tc=25C) | 161 A | β |
| Continuous Drain Current (ID, Ta=25C) | 28 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed ID limit] | [DATA_NEEDED: pulsed drain current IDM] |
| On-Resistance RDS(on) max @ VGS=10V | 1.9 mOhm | β |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Gate Threshold Voltage VGS(th) typ | 1.7 V | β |
| Total Gate Charge Qg typ | 85 nC | β |
| Power Dissipation PD (Tc=25C) | 94 W | β |
| Operating Temperature Range | -55 C to +150 C | -55C to +150C |
| Package | TDSON-8 (SuperSO8) 5x6 mm | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited) | 1 |
| RoHS Status | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes | β |
| Avalanche Rated | Yes | β |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 40 V |
| Gate-to-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current at 25C (ID, Ta) | β | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | β | 85 A |
| Power Dissipation at Ta (PD) | β | 2.5 W |
| Power Dissipation at Tc (PD) | β | 57 W |
| On-State Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/min/max] |
| Avalanche Energy Rated | β | Yes (single-pulse avalanche) |