BSC019N04LSTATMA1 vs BSC050N04LSGATMA1 Comparação
Comparação detalhada lado a lado de BSC019N04LSTATMA1 por Infineon e BSC050N04LSGATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | BSC019N04LSTATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $1,21 | $0,41 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 3 (trench MOSFET) |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc=25C) | 161 A | — |
| Continuous Drain Current (ID, Ta=25C) | 28 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed ID limit] | [DATA_NEEDED: pulsed drain current IDM] |
| On-Resistance RDS(on) max @ VGS=10V | 1.9 mOhm | — |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate Threshold Voltage VGS(th) typ | 1.7 V | — |
| Total Gate Charge Qg typ | 85 nC | — |
| Power Dissipation PD (Tc=25C) | 94 W | — |
| Faixa de temperatura de operação | -55 C to +150 C | -55C to +150C |
| Encapsulamento | TDSON-8 (SuperSO8) 5x6 mm | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Nível MSL | 1 (unlimited) | 1 |
| Status RoHS | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes | — |
| Avalanche Rated | Yes | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current at 25C (ID, Ta) | — | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | — | 85 A |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 57 W |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Avalanche Energy Rated | — | Yes (single-pulse avalanche) |