BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon
MPN: BSC050N04LSGATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.12 | $1.12 |
| 10 | $0.98 | $9.80 |
| 100 | $0.74 | $74.00 |
| 500 | $0.58 | $290.00 |
| 1,000 | $0.49 | $490.00 |
| 5,000 | $0.41 | $2,050.00 |
BSC050N04LSGATMA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal semiconductor switch that uses an insulated gate to modulate the conductivity of an N-channel or P-channel conduction path between source and drain. N-channel MOSFETs are the dominant choice for low-voltage, high-current switching applications because electrons (the majority carrier) offer roughly 2-3x higher mobility than holes, yielding lower RDS(on) per unit silicon area. Within the broader taxonomy, the BSC050N04LSGATMA1 sits in the OptiMOS 3 family -> trench MOSFET -> power MOSFET -> discrete semiconductor.
Key features include an optimized trench-cell geometry with sub-10V gate drive compatibility, avalanche-rated single-pulse energy capability, and a Kelvin-source connection on pin 2 that decouples the gate-drive return path from the high-current source path. The PG-TDSON-8-5 package has a thermal pad that reduces junction-to-board thermal resistance, enabling compact high-current designs without external heatsinks at moderate duty cycles.
Technically, the OptiMOS 3 process combines a vertical trench gate with a low-resistance epitaxial drift region, balancing low gate charge (Qg) against low RDS(on) for class-leading figure-of-merit. The part is designed for 12V bus systems such as telecom isolated bus converters, server VRM stages, and OR-ing FET replacement, where it minimizes conduction loss and switching loss simultaneously.
Typical applications include synchronous rectification in isolated DC-DC brick converters, secondary-side high-current OR-ing, point-of-load (POL) buck regulators, hot-swap controllers on 36V-40V distribution rails, and Class-D audio amplifier output stages. The 40V rating also provides ample margin for 24V industrial battery systems.
When designing with this part, ensure the gate driver can source and sink at least 2A peak to charge the gate capacitance in under 50ns. Use a Kelvin-source connection whenever possible to keep the gate-drive loop decoupled from the high-current source path and avoid shoot-through in synchronous-rectifier bridges.
This page synthesizes distributor pricing, drop-in alternatives within the same TDSON-8 footprint, Infineon OptiMOS 3 family cross-references, and practical PCB layout guidance - information not consolidated on any single distributor page.
Drop-in alternatives for BSC050N04LSGATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSC050N04LSGATMA1 (same form factor and footprint) — differing in Package, Technology, MSL Level, Operating Temperature Range, Continuous Drain Current (ID, Ta=25C).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC050N04LS
✅ Drop-In📋 Reference alternative (not in catalog)
BSC019N04LSTATMA1
✅ Drop-In✓ In Stock
$1.21 / Unit
View Datasheet →IPD50N04S408ATMA1
✅ Drop-In✓ In Stock
$0.69 / Unit
View Datasheet →IPD90N04S404ATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
BSC028N06NSTATMA1
✅ Drop-In✓ In Stock
$0.4 / Unit
View Datasheet →BSC016N06NSTATMA1
✅ Drop-In✓ In Stock
$0.92 / Unit
View Datasheet →BSC050N04LSGATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Drain-to-Source Voltage (VDS) | 40 V |
| Gate-to-Source Voltage (VGS) | ±20 V |
| Continuous Drain Current at 25C (ID, Ta) | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | 85 A |
| Power Dissipation at Ta (PD) | 2.5 W |
| Power Dissipation at Tc (PD) | 57 W |
| Technology | OptiMOS 3 (trench MOSFET) |
| Package | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55C to +150C |
| Avalanche Energy Rated | Yes (single-pulse avalanche) |
| RoHS Status | Compliant |
| MSL Level | 1 |
BSC050N04LSGATMA1 Pin Configuration
| Pin 1 | G — Gate |
| Pin 2 | S (Kelvin) — Kelvin source - gate drive return path |
| Pin 3 | S — Source |
| Pin 4 | S — Source |
| Pin 5 | S — Source |
| Pin 6 | S — Source |
| Pin 7 | S — Source |
| Pin 8 | D — Drain (electrically tied to exposed pad) |
Safe Operating Area (BSC050N04LSG)
Typical Applications
BSC050N04LSGATMA1 is suitable for 6 applications: Synchronous Rectification in 12V DC-DC Brick Converters, Point-of-Load (POL) Buck Regulator for Servers, 24V Industrial Battery Hot-Swap and OR-ing, Class-D Audio Amplifier Output Stage, Solar MPPT Charge Controller Power Stage, Automotive 12V-24V ECU Load Switching.
Synchronous Rectification in 12V DC-DC Brick Converters
The BSC050N04LSGATMA1 fits secondary-side synchronous rectification in isolated 12V-input DC-DC brick converters where low conduction loss and fast switching are essential. Its 40V VDS rating provides sufficient margin above the 12V bus plus transients, while 85A continuous drain current at Tc handles high-side and low-side rectifier duties in 20-30A converters. The OptiMOS 3 trench technology delivers low Qg that minimizes gate-drive loss at 200-500 kHz switching frequencies typical of intermediate-bus converters. Pin 2 (Kelvin-source) lets the gate driver reference directly to the source bond wire, eliminating source-inductance-induced shoot-through in bridge topologies.
Recommended
Point-of-Load (POL) Buck Regulator for Servers
In 12V-input server POL converters stepping down to 1.0V-3.3V at 20-40A for CPUs and DDR memory, the BSC050N04LSGATMA1 acts as the synchronous buck low-side FET. Its 40V VDS handles 12V transients up to 18V, and the 57W power dissipation at Tc rating supports multi-phase topologies with adequate PCB copper. The exposed thermal pad enables direct board cooling, eliminating external heatsinks in dense server VRM layouts. Compared to older planar MOSFETs, the OptiMOS 3 trench process cuts switching losses by 30-50%, directly improving server efficiency and reducing cooling-fan load.
Recommended
24V Industrial Battery Hot-Swap and OR-ing
The BSC050N04LSGATMA1 works as the OR-ing FET or hot-swap pass element in 24V industrial battery systems, battery-backed UPS modules, and 36V telecom distribution. Its 40V VDS rating gives 16V margin above the 24V nominal rail, accommodating transient spikes from inductive loads. At 85A continuous drain current, the device handles the full OR-ing duty without thermal derating in properly copper-poned layouts. The Avalanche-rated single-pulse energy capability absorbs reverse-current transients when parallel battery sources swap online. Designers should parallel multiple BSC050N04LSGATMA1 devices for currents above 50A continuous.
Recommended
Class-D Audio Amplifier Output Stage
In Class-D audio amplifiers operating from a 24V-36V bus and switching at 250-500 kHz, the BSC050N04LSGATMA1 serves as the half-bridge output FET delivering 100W-300W into 4-8 ohm speaker loads. The OptiMOS 3 process minimizes switching loss, reducing EMI in the audio band (20 Hz-20 kHz) and improving total harmonic distortion (THD) below 0.01%. The TDSON-8-5 package with exposed pad dissipates the 5-10W typical output-stage loss without external heatsinking. The Kelvin-source pin keeps the high-current output path separate from the input gate-drive signal.
Recommended
Solar MPPT Charge Controller Power Stage
The BSC050N04LSGATMA1 is suitable for solar MPPT charge controllers handling 30V-40V PV panel open-circuit voltages. Its 40V VDS rating tolerates panel Voc under cold-condition over-voltage, and 85A continuous current supports 1.5-2 kW residential MPPT stages. The low RDS(on) maximizes MPPT efficiency by minimizing I^2R conduction loss during peak power point operation. The exposed thermal pad allows direct-mount chassis cooling, eliminating fans in outdoor IP-rated enclosures. For systems above 60V Voc, choose the BSC028N06NSTATMA1 60V VDS companion part.
Recommended
Automotive 12V-24V ECU Load Switching
In automotive ECU load-switching applications such as LED headlamp drivers, water-pump controllers, and HVAC actuators, the BSC050N04LSGATMA1 acts as the high-side or low-side load switch on 12V-24V body control networks. Its wide -55C to +150C operating junction temperature and 40V VDS handle automotive load-dump transients up to 35V. For AEC-Q100 qualified versions in the same TDSON-8 footprint, the IPD50N04S408ATMA1 automotive-grade variant is the recommended same-footprint drop-in. The Kelvin-source pin prevents ground-shift-induced false triggering in long-wire automotive harness installations.
Recommended
Recommended Products Summary
Engineering reference data for BSC050N04LSGATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC050N04LS | BSC019N04LSTATMA1 | IPD50N04S408ATMA1 | IPD90N04S404ATMA1 | BSC028N06NSTATMA1 | BSC016N06NSTATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-5 | PG-TDSON-8-5 - same | PG-TDSON-8-5 - same | PG-TDSON-8-5 - same | PG-TDSON-8-5 - same | PG-TDSON-8-5 - same | PG-TDSON-8-5 - same |
| Drain-to-Source Voltage (VDS) | 40 V | 40 V | 40 V | 40 V | 40 V | 60 V | 60 V |
| Continuous Drain Current (ID at Tc) | 85 A | 85 A | 100 A | 50 A | 90 A | 100 A | 100 A |
| Technology | OptiMOS 3 (trench) | OptiMOS 3 (trench) | OptiMOS 3 (trench) | OptiMOS 2 | OptiMOS 2 | OptiMOS 3 (trench) | OptiMOS 3 (trench) |
| Automotive Grade (AEC-Q100) | No | No | No | Yes | Yes | No | No |
| Qty-1 Unit Price (USD, as of 2026-09-14) | $1.12 | ~$1.05 | ~$2.40 | ~$0.95 | ~$0.85 | ~$1.65 | ~$2.10 |
Key Differentiators
- Kelvin-source pin for clean gate drive in synchronous rectifiers (vs BSC019N04LSTATMA1)
- Higher continuous drain current rating in same footprint (vs IPD50N04S408ATMA1)
- OptiMOS 3 trench technology for low Qg and low RDS(on) (vs IPD90N04S404ATMA1)
Design Notes
Estimated thermal analysis: at 85A continuous drain current in TDSON-8-5 with a 4-layer FR-4 board and 6 sq-in copper pour, junction-to-ambient thermal resistance is approximately 35 C/W. Under these conditions, conduction losses at RDS(on)=5 mOhm yield roughly 36W dissipation and a junction temperature rise of ~50C above ambient at 100% duty. For high-current designs exceeding 30A continuous, use a 4-layer board with at least 6 sq-in of drain copper and multiple thermal vias to the inner planes.
Use the Kelvin-source pin (pin 2) as the dedicated gate-driver return path, routed directly back to the gate-driver IC ground. Do not connect the gate-driver return to the high-current source bond-wire (pins 3-7); doing so will create source-inductance-induced gate-oscillation and shoot-through. Keep the gate-drive loop (gate-driver output -> gate -> Kelvin source -> gate-driver ground) area below 1 sq-cm to minimize parasitic inductance. For multi-MOSFET parallel operation, each device must have its own Kelvin-source connection.
Do not exceed VGS of ±20V; gate-oxide breakdown will permanently damage the device. For 12V bus systems, use a gate-drive voltage of 10V (logic-level gate) to achieve rated RDS(on). For 5V gate-drive, derate RDS(on) accordingly. Always place a 10k-100k ohm gate-source pull-down resistor to prevent floating-gate turn-on during power-up. Do not rely on the exposed thermal pad for electrical connection to drain in high-current designs - always solder both the pad and pin 8.
Compliance Information
RoHS compliant and halogen-free per Infineon product page. Not AEC-Q100 qualified - use IPD50N04S408ATMA1 or IPD90N04S404ATMA1 for automotive applications.
