BSC019N04LSTATMA1 vs BSC0921NDIATMA1 Comparison

Detailed side-by-side comparison of BSC019N04LSTATMA1 by Infineon and BSC0921NDIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC019N04LSTATMA1 BSC0921NDIATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS 25V (N-channel)
Drain-Source Voltage (VDS) 40 V 30 V
Continuous Drain Current (ID, Tc=25C) 161 A —
Continuous Drain Current (ID, Ta=25C) 28 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed ID limit] 31 A (per channel, package-limited)
On-Resistance RDS(on) max @ VGS=10V 1.9 mOhm —
On-Resistance RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate Threshold Voltage VGS(th) typ 1.7 V —
Total Gate Charge Qg typ 85 nC —
Power Dissipation PD (Tc=25C) 94 W —
Operating Temperature Range -55 C to +150 C —
Package TDSON-8 (SuperSO8) 5x6 mm PG-TISON-8 (8-pin, exposed pad)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (unlimited) 1 (per Infineon OptiMOS family)
RoHS Status Compliant Compliant
Lead-Free / Halogen-Free Yes / Yes —
Avalanche Rated Yes —
Manufacturer — Infineon Technologies
Configuration — Dual N-Channel MOSFET Array
Continuous Drain Current (ID) — 17 A (per channel)
Total Power Dissipation (PD) — 1 W
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V/4.5V]
Gate Charge (Qg) — Ultra-low (OptiMOS 25V family characteristic)
Output Charge (Qoss) — Ultra-low (OptiMOS 25V family characteristic)
Operating Temperature — -55C to +150C (junction)
Primary Application — Synchronous buck converters, VRMs, POL regulators

Datasheets & Resources

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