BSC021N08NS5ATMA1 vs BSC039N06NSATMA1 Comparison
Detailed side-by-side comparison of BSC021N08NS5ATMA1 by Infineon and BSC039N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC039N06NSATMA1
BSC039N06NSATMA1 - 60V 3.9mΞ© 100A OptiMOS 5 N-MOSFET | Infineon
BSC039N06NSATMA1 β ActiveSpecification Comparison
| Parameter | BSC021N08NS5ATMA1 | BSC039N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.81 | $0.46 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC021N08NS5ATMA1 | β |
| Technology | OptiMOS 5 (N-channel trench) | OptiMOS 5 (TrenchFET-style) |
| Drain-Source Voltage (V_DS max) | 80 V | β |
| Continuous Drain Current (I_D, Tc=25Β°C) | 226 A | β |
| Continuous Drain Current (I_D, Tc=100Β°C) | 100 A | β |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance R_DS(on) max (V_GS=10 V) | 2.1 mΞ© | β |
| Gate-Source Voltage V_GS max | Β±20 V | β |
| Power Dissipation P_D (Tc=25Β°C) | 214 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | -55C to +150C |
| Package | SuperSO8 5x6 (PG-TSON-8-3) | PG-TDSON-8-6 (TDSON EP, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Total Gate Charge Q_G typ | [DATA_NEEDED: total gate charge] | β |
| R_thJC thermal resistance max | [DATA_NEEDED: R_thJC] | β |
| RoHS Status | Compliant (Pb-free) | Compliant |
| MSL Level | MSL 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Avalanche Energy Rated | Yes (single-pulse) | β |
| Delivery Form | Tape & Reel (T&R) | β |
| Series | β | OptiMOS 5 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at TA | β | 19 A |
| Continuous Drain Current (ID) at TC | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM pulsed value at TC] |
| On-Resistance RDS(on) max at VGS=10V | β | 3.9 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical and min/max] |
| Power Dissipation at TA (PD) | β | 2.5 W |
| Power Dissipation at TC (PD) | β | 69 W |
| Number of Pins | β | 8 |
| Gate Drive Voltage (VGS) | β | Β±20 V max |