BSC021N08NS5ATMA1 vs BSC039N06NSATMA1 对比

详细并排对比 BSC021N08NS5ATMA1 出自 Infineon 和 BSC039N06NSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC021N08NS5ATMA1 BSC021N08NS5ATMA1 - 80V 226A OptiMOS 5 N-MOSFET | Infineon

BSC021N08NS5ATMA1 - 80V 226A OptiMOS 5 N-MOSFET | Infineon

BSC021N08NS5ATMA1 ✓ 量产中

规格对比

参数 BSC021N08NS5ATMA1 BSC039N06NSATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.81 $0.46
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC021N08NS5ATMA1 —
Technology OptiMOS 5 (N-channel trench) OptiMOS 5 (TrenchFET-style)
Drain-Source Voltage (V_DS max) 80 V —
Continuous Drain Current (I_D, Tc=25°C) 226 A —
Continuous Drain Current (I_D, Tc=100°C) 100 A —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] —
On-Resistance R_DS(on) max (V_GS=10 V) 2.1 mΩ —
Gate-Source Voltage V_GS max ±20 V —
Power Dissipation P_D (Tc=25°C) 214 W —
工作结温 -55 °C to +175 °C -55C to +150C
封装 SuperSO8 5x6 (PG-TSON-8-3) PG-TDSON-8-6 (TDSON EP, 5x6 mm)
安装类型 Surface Mount Surface Mount
Total Gate Charge Q_G typ [DATA_NEEDED: total gate charge] —
R_thJC thermal resistance max [DATA_NEEDED: R_thJC] —
RoHS 状态 Compliant (Pb-free) Compliant
MSL 等级 MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Avalanche Energy Rated Yes (single-pulse) —
Delivery Form Tape & Reel (T&R) —
Series — OptiMOS 5
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TA — 19 A
Continuous Drain Current (ID) at TC — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulsed value at TC]
On-Resistance RDS(on) max at VGS=10V — 3.9 mOhm
On-Resistance RDS(on) max at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max]
Power Dissipation at TA (PD) — 2.5 W
Power Dissipation at TC (PD) — 69 W
引脚数 — 8
Gate Drive Voltage (VGS) — ±20 V max

数据手册与资源

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