BSC021N08NS5ATMA1 vs BSC039N06NSATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC021N08NS5ATMA1 sa pamamagitan ng Infineon at BSC039N06NSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC039N06NSATMA1 - 60V 3.9mΩ 100A OptiMOS 5 N-MOSFET | Infineon
BSC039N06NSATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC021N08NS5ATMA1 | BSC039N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC021N08NS5ATMA1 | — |
| Technology | OptiMOS 5 (N-channel trench) | OptiMOS 5 (TrenchFET-style) |
| Drain-Source Voltage (V_DS max) | 80 V | — |
| Continuous Drain Current (I_D, Tc=25°C) | 226 A | — |
| Continuous Drain Current (I_D, Tc=100°C) | 100 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance R_DS(on) max (V_GS=10 V) | 2.1 mΩ | — |
| Gate-Source Voltage V_GS max | ±20 V | — |
| Power Dissipation P_D (Tc=25°C) | 214 W | — |
| Temperature ng Junction na Operasyon | -55 °C to +175 °C | -55C to +150C |
| Packhaging | SuperSO8 5x6 (PG-TSON-8-3) | PG-TDSON-8-6 (TDSON EP, 5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Total Gate Charge Q_G typ | [DATA_NEEDED: total gate charge] | — |
| R_thJC thermal resistance max | [DATA_NEEDED: R_thJC] | — |
| Tindminan RoHS | Compliant (Pb-free) | Compliant |
| Level ng MSL | MSL 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Delivery Form | Tape & Reel (T&R) | — |
| Series | — | OptiMOS 5 |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA | — | 19 A |
| Continuous Drain Current (ID) at TC | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed value at TC] |
| On-Resistance RDS(on) max at VGS=10V | — | 3.9 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| Power Dissipation at TA (PD) | — | 2.5 W |
| Power Dissipation at TC (PD) | — | 69 W |
| Bilang ng Pins | — | 8 |
| Gate Drive Voltage (VGS) | — | ±20 V max |