BSC021N08NS5ATMA1 vs IPT007N06NATMA1 Comparison
Detailed side-by-side comparison of BSC021N08NS5ATMA1 by Infineon and IPT007N06NATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPT007N06NATMA1
IPT007N06NATMA1 - 60V 300A OptiMOS 5 N-FET | Infineon
IPT007N06NATMA1 β ActiveSpecification Comparison
| Parameter | BSC021N08NS5ATMA1 | IPT007N06NATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.81 | $2.84 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSC021N08NS5ATMA1 | β |
| Technology | OptiMOS 5 (N-channel trench) | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (V_DS max) | 80 V | β |
| Continuous Drain Current (I_D, Tc=25Β°C) | 226 A | β |
| Continuous Drain Current (I_D, Tc=100Β°C) | 100 A | β |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance R_DS(on) max (V_GS=10 V) | 2.1 mΞ© | β |
| Gate-Source Voltage V_GS max | Β±20 V | β |
| Power Dissipation P_D (Tc=25Β°C) | 214 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | SuperSO8 5x6 (PG-TSON-8-3) | PG-HSOF-8-1 (TOLL) |
| Mounting Type | Surface Mount | Surface Mount |
| Total Gate Charge Q_G typ | [DATA_NEEDED: total gate charge] | β |
| R_thJC thermal resistance max | [DATA_NEEDED: R_thJC] | β |
| RoHS Status | Compliant (Pb-free) | Compliant |
| MSL Level | MSL 1 (per JEDEC J-STD-020) | MSL 1 (per JEDEC J-STD-020) |
| Avalanche Energy Rated | Yes (single-pulse) | β |
| Delivery Form | Tape & Reel (T&R) | β |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID, TC=25C) | β | 300 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on), VGS=10V max) | β | 0.75 mOhm |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max] |
| Power Dissipation (PD, TC=25C) | β | 375 W |
| Operating Temperature Range | β | -55 C to +175 C (TJ) |
| Configuration | β | Single N-channel |
| Gate Charge (QG) | β | [DATA_NEEDED: total gate charge] |
| Avalanche Energy (EAS) | β | [DATA_NEEDED: single-pulse avalanche energy] |
| Thermal Resistance (RthJC max) | β | [DATA_NEEDED: RthJC] |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |
| Standard Pack Quantity | β | 3000 (Tape & Reel) |